Presentation | 2005-06-24 Anisotropic Gain in GaInAsP/InP Strained Quantum-Wire Lasers Takeo MARUYAMA, Dhanorm PLUMWONGROT, Hideki YAGI, Koji MIURA, Yoshifumi NISHIMOTO, Shigehisa ARAI, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | GaInAsP/InP quantum-wire lasers consisting of strain-compensated quantum-wire active regions, laid on parallel and perpendicular to cavity direction, were fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. The threshold current of the quantum-wire laser laid on parallel to the cavity is two times higher than that of perpendicular to the cavity. It was found that the differential gain in parallel layout was approximately 5 times higher than that in perpendicular layout from gain spectral measurements by Hakki-Paoli method. Hence the anomalous lasing characteristics are attributed to this anisotropic gain property. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Quantum-Wire Laser / Material Gain / GaInAsP/InP / Strain-Compensated Quantum-Well / CH_4/H_2-RIE / OMVPE Regrowth |
Paper # | OPE2005-17,LQE2005-16 |
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Conference Information | |
Committee | LQE |
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Conference Date | 2005/6/17(1days) |
Place (in Japanese) | (See Japanese page) |
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Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Lasers and Quantum Electronics (LQE) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Anisotropic Gain in GaInAsP/InP Strained Quantum-Wire Lasers |
Sub Title (in English) | |
Keyword(1) | Quantum-Wire Laser |
Keyword(2) | Material Gain |
Keyword(3) | GaInAsP/InP |
Keyword(4) | Strain-Compensated Quantum-Well |
Keyword(5) | CH_4/H_2-RIE |
Keyword(6) | OMVPE Regrowth |
1st Author's Name | Takeo MARUYAMA |
1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST() |
2nd Author's Name | Dhanorm PLUMWONGROT |
2nd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
3rd Author's Name | Hideki YAGI |
3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
4th Author's Name | Koji MIURA |
4th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
5th Author's Name | Yoshifumi NISHIMOTO |
5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
6th Author's Name | Shigehisa ARAI |
6th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
Date | 2005-06-24 |
Paper # | OPE2005-17,LQE2005-16 |
Volume (vol) | vol.105 |
Number (no) | 143 |
Page | pp.pp.- |
#Pages | 4 |
Date of Issue |