Presentation 2005-06-24
Anisotropic Gain in GaInAsP/InP Strained Quantum-Wire Lasers
Takeo MARUYAMA, Dhanorm PLUMWONGROT, Hideki YAGI, Koji MIURA, Yoshifumi NISHIMOTO, Shigehisa ARAI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) GaInAsP/InP quantum-wire lasers consisting of strain-compensated quantum-wire active regions, laid on parallel and perpendicular to cavity direction, were fabricated by electron beam lithography, CH_4/H_2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth. The threshold current of the quantum-wire laser laid on parallel to the cavity is two times higher than that of perpendicular to the cavity. It was found that the differential gain in parallel layout was approximately 5 times higher than that in perpendicular layout from gain spectral measurements by Hakki-Paoli method. Hence the anomalous lasing characteristics are attributed to this anisotropic gain property.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Quantum-Wire Laser / Material Gain / GaInAsP/InP / Strain-Compensated Quantum-Well / CH_4/H_2-RIE / OMVPE Regrowth
Paper # OPE2005-17,LQE2005-16
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Conference Information
Committee LQE
Conference Date 2005/6/17(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Anisotropic Gain in GaInAsP/InP Strained Quantum-Wire Lasers
Sub Title (in English)
Keyword(1) Quantum-Wire Laser
Keyword(2) Material Gain
Keyword(3) GaInAsP/InP
Keyword(4) Strain-Compensated Quantum-Well
Keyword(5) CH_4/H_2-RIE
Keyword(6) OMVPE Regrowth
1st Author's Name Takeo MARUYAMA
1st Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST()
2nd Author's Name Dhanorm PLUMWONGROT
2nd Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
3rd Author's Name Hideki YAGI
3rd Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST
4th Author's Name Koji MIURA
4th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
5th Author's Name Yoshifumi NISHIMOTO
5th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology
6th Author's Name Shigehisa ARAI
6th Author's Affiliation Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST
Date 2005-06-24
Paper # OPE2005-17,LQE2005-16
Volume (vol) vol.105
Number (no) 143
Page pp.pp.-
#Pages 4
Date of Issue