| Presentation | 2005-06-24 Structure dependence of lasing characteristics of GaInAs/AlGaAs tunneling injection lasers M. Ohta, T. Furuhata, T. Matsuura, Y. Matsui, T. Miyamoto, F. Koyama, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Lasing characteristics of MBE grown GaInAs/AlGaAs single QW lasers with double barrier tunnel injection structures are investigated. The I-L characteristics and threshold current density are strongly influenced by the tunnel injection structure, such as thickness of the tunnel injection layer and tunnel barrier layer. Lowering threshold current density is observed by decreasing of Al composition of the tunnel barrier layer. A high characteristic temperature of 164K is obtained for the tunnel injection laser. The structure dependence of lasing characteristics is important in order to realize high performance lasers with optimized tunnel injection structure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum well lasers / Tunnel injection structure / GaInAs/AlGaAs / Characteristic temperature |
| Paper # | OPE2005-14,LQE2005-13 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2005/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Structure dependence of lasing characteristics of GaInAs/AlGaAs tunneling injection lasers |
| Sub Title (in English) | |
| Keyword(1) | Quantum well lasers |
| Keyword(2) | Tunnel injection structure |
| Keyword(3) | GaInAs/AlGaAs |
| Keyword(4) | Characteristic temperature |
| 1st Author's Name | M. Ohta |
| 1st Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology() |
| 2nd Author's Name | T. Furuhata |
| 2nd Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology |
| 3rd Author's Name | T. Matsuura |
| 3rd Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology |
| 4th Author's Name | Y. Matsui |
| 4th Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology |
| 5th Author's Name | T. Miyamoto |
| 5th Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology |
| 6th Author's Name | F. Koyama |
| 6th Author's Affiliation | Microsystem Research Center, P&I Lab., Tokyo Institute of Technology |
| Date | 2005-06-24 |
| Paper # | OPE2005-14,LQE2005-13 |
| Volume (vol) | vol.105 |
| Number (no) | 143 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |