Presentation 2005-01-28
Simulation of Ultrafast GaN/AlN Intersubband-Transition Optical Switches
Nobuo SUZUKI, Norio IIZUKA, Kei KANEKO,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A simulator for GaN intersubband transition optical switches has been developed. Influences of the inhomogeneous broadening and the 2-dimensional mode profile have been taken into consideration. Characteristics of the fabricated switch were limited by a longer absorption peak wavelength and by excess loss due to the dislocations. When they are improved, the switching pulse energy will be reduced to about 10 pJ for ridge waveguides and about 1 pJ for sub-micron high-mesa waveguides. The measured optical gate width (~360 fs) is limited by the widths of the pump pulses, and the intrinsic response time is about 100fs.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Optical Switch / Intersubband Transition / Saturable Absorption / GaN / FDTD
Paper # PN2004-98,OFT2004-104,OPE2004-205,LQE2004-152
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Committee LQE
Conference Date 2005/1/21(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Simulation of Ultrafast GaN/AlN Intersubband-Transition Optical Switches
Sub Title (in English)
Keyword(1) Optical Switch
Keyword(2) Intersubband Transition
Keyword(3) Saturable Absorption
Keyword(4) GaN
Keyword(5) FDTD
1st Author's Name Nobuo SUZUKI
1st Author's Affiliation Corporate R&D Center, Toshiba Corp.()
2nd Author's Name Norio IIZUKA
2nd Author's Affiliation Corporate R&D Center, Toshiba Corp.
3rd Author's Name Kei KANEKO
3rd Author's Affiliation Corporate R&D Center, Toshiba Corp.
Date 2005-01-28
Paper # PN2004-98,OFT2004-104,OPE2004-205,LQE2004-152
Volume (vol) vol.104
Number (no) 611
Page pp.pp.-
#Pages 6
Date of Issue