Presentation 2004-11-05
160 Gbps 3R Regeneration Using NOLM and Mode-Locked Laser Diodes
Shin ARAHIRA, Hitoshi MURAI, Kouzou FUJII, Yoh OGAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) 160 Gbps 3R regeneration was demonstrated using a modified NOLM and mode-locked laser diodes. Operation stability against changes of operating wavelengths and environment temperature as well as high extinction ratio over 30 dB have been secured by incorporating fiber polarizes and an optical phase-bias circuit into the NOLM. Q value improvementhas been ach ieved for degraded 160 Gbps datas with poor S/N ratios.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) 3R regeneration / NOLM / 160 Gbps / mode-locked laser diode
Paper # OCS2004-108,OPE2004-173,LQE2004-117
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Conference Information
Committee LQE
Conference Date 2004/10/29(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) 160 Gbps 3R Regeneration Using NOLM and Mode-Locked Laser Diodes
Sub Title (in English)
Keyword(1) 3R regeneration
Keyword(2) NOLM
Keyword(3) 160 Gbps
Keyword(4) mode-locked laser diode
1st Author's Name Shin ARAHIRA
1st Author's Affiliation Corporate R&D Center, Oki Electric Industry Co., Ltd.()
2nd Author's Name Hitoshi MURAI
2nd Author's Affiliation Corporate R&D Center, Oki Electric Industry Co., Ltd.
3rd Author's Name Kouzou FUJII
3rd Author's Affiliation Corporate R&D Center, Oki Electric Industry Co., Ltd.
4th Author's Name Yoh OGAWA
4th Author's Affiliation Corporate R&D Center, Oki Electric Industry Co., Ltd.
Date 2004-11-05
Paper # OCS2004-108,OPE2004-173,LQE2004-117
Volume (vol) vol.104
Number (no) 415
Page pp.pp.-
#Pages 4
Date of Issue