Presentation 2004/10/15
Violet LED fabricated on R-plane sapphire
K. Iida, H. Kasugai, S. Mishima, Y. Miyake, A. Honshio, T. Kawashima, M. Tsuda, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki,
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Abstract(in English) It is well known that non-polar A-plane group III nitrides film can be grown on the R-plane sapphire substrate. In this report, we scrutinized the growth conditions on the R-plane sapphire, and realized the device quality crystal with a thickness of about 2μm. As the result, the violet LED having characteristics of operation voltage 6V (DC20mA) and the luminescence wavelength of 413nm was obtained.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) GaN / R-plane sapphire / LED
Paper # ED2004-152,CPM2004-126,LQE2004-90
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Conference Information
Committee LQE
Conference Date 2004/10/15(1days)
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Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Violet LED fabricated on R-plane sapphire
Sub Title (in English)
Keyword(1) GaN
Keyword(2) R-plane sapphire
Keyword(3) LED
1st Author's Name K. Iida
1st Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University()
2nd Author's Name H. Kasugai
2nd Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
3rd Author's Name S. Mishima
3rd Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
4th Author's Name Y. Miyake
4th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
5th Author's Name A. Honshio
5th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
6th Author's Name T. Kawashima
6th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
7th Author's Name M. Tsuda
7th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University:Single Crystal Division, Kyocera Corporation
8th Author's Name M. Iwaya
8th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
9th Author's Name S. Kamiyama
9th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
10th Author's Name H. Amano
10th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
11th Author's Name I. Akasaki
11th Author's Affiliation Faculty of Science and Technology, Meijo University, 21^ century COE "Nano-Factory", Faculty of Science and Technology, Meijo University
Date 2004/10/15
Paper # ED2004-152,CPM2004-126,LQE2004-90
Volume (vol) vol.104
Number (no) 362
Page pp.pp.-
#Pages 4
Date of Issue