| Presentation | 2004/10/15 Growth of High Quality Nitride Nanocolumns by RF-MBE and Fabrication of InGaN/GaN Nanocolumn LED Akihiko KIKUCHI, Mizue KAWAI, Makoto Tada, Katsumi KISHINO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The optical property of GaN nanocolumns grown on (0001) Al_2O_3 substrates was characterized by room temperature photolummescence (PL) measurement For the case of low excitation condition, the PL peak intensity of the GaN nanocolumns was about 20～400 times stronger than that of an undoped GaN continuous film grown by metalorganic chemical vapor deposition with a dislocation density of 3～5x10^9cm^<-2> and thickness of 37 μm For the higher excitation condition, stimulated emission was observed with a low threshold power density of 198 kW/cm^2 We also grown GaN nanocolumns with InGaN/GaN multiple quantum well. Bright PL emission at wavelength from 436 to 614 nm was observed InGaN/GaN multiple quantum well nanocolumn LEDs were grown on n-type (111) Si The LEDs showed clear rectifying behavior Green to red-orange electro-luminescence was obtained at room temperature |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Nanocolumn / Nanorod / Nanowire / Nitride semiconductor / LED / RF-MBE |
| Paper # | ED2004-150,CPM2004-124,LQE2004-88 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Growth of High Quality Nitride Nanocolumns by RF-MBE and Fabrication of InGaN/GaN Nanocolumn LED |
| Sub Title (in English) | |
| Keyword(1) | Nanocolumn |
| Keyword(2) | Nanorod |
| Keyword(3) | Nanowire |
| Keyword(4) | Nitride semiconductor |
| Keyword(5) | LED |
| Keyword(6) | RF-MBE |
| 1st Author's Name | Akihiko KIKUCHI |
| 1st Author's Affiliation | Faculty of Science and Engineering, Sophia University() |
| 2nd Author's Name | Mizue KAWAI |
| 2nd Author's Affiliation | Faculty of Science and Engineering, Sophia University |
| 3rd Author's Name | Makoto Tada |
| 3rd Author's Affiliation | Faculty of Science and Engineering, Sophia University |
| 4th Author's Name | Katsumi KISHINO |
| 4th Author's Affiliation | Faculty of Science and Engineering, Sophia University |
| Date | 2004/10/15 |
| Paper # | ED2004-150,CPM2004-124,LQE2004-88 |
| Volume (vol) | vol.104 |
| Number (no) | 362 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |