| Presentation | 2004/10/15 High-quality III-VN alloys (GaInNAs,GaInNP) on Al containing layers grown by MOCVD Takashi TAKAHASHI, Shunichi SATO, Naoto JIKUTANI, Morimasa KAMINISHI, Kei HARA, Shiro SATOH, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The mixed group-V nitride alloy semiconductor (III-VN alloy) is attractive novel material for long wavelength laser, solar cell, and HBT. We have studied the cause of crystalline quality degradation of the III-VN alloys such as GaInNAs and GaInNP grown on the Al containing layer by metalorganic chemical vapor deposition (MOCVD). Directly grown III-VN alloy on Al containing layer shows rough surface morphology and low photoluminescence intensity in the cause of nitrogen pile up at the interface. Al contamination into the III-VN alloy was detected and the oxygen incorporated the III-VN alloy by reacting with the Al caused the degradation of the emission efficiency. By optimizing the device structure and growth conditions, the lowest threshold current density per well (120A/cm^2/well) for 1.3 μm range GaInNAs laser was demonstrated at the GaInNAs triple quantum well (TQW) lasers on AlGaAs cladding layer. It was indicated that high-quality III-VN alloy growth on Al containing layer was enable by MOCVD. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MOCVD / III-VN alloy / GaInNAs / GalnNP |
| Paper # | ED2004-141,CPM2004-115,LQE2004-79 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | High-quality III-VN alloys (GaInNAs,GaInNP) on Al containing layers grown by MOCVD |
| Sub Title (in English) | |
| Keyword(1) | MOCVD |
| Keyword(2) | III-VN alloy |
| Keyword(3) | GaInNAs |
| Keyword(4) | GalnNP |
| 1st Author's Name | Takashi TAKAHASHI |
| 1st Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd.() |
| 2nd Author's Name | Shunichi SATO |
| 2nd Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd. |
| 3rd Author's Name | Naoto JIKUTANI |
| 3rd Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd. |
| 4th Author's Name | Morimasa KAMINISHI |
| 4th Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd. |
| 5th Author's Name | Kei HARA |
| 5th Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd. |
| 6th Author's Name | Shiro SATOH |
| 6th Author's Affiliation | Research and Development Center, Research & Development Group, Ricoh Company Ltd. |
| Date | 2004/10/15 |
| Paper # | ED2004-141,CPM2004-115,LQE2004-79 |
| Volume (vol) | vol.104 |
| Number (no) | 362 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |