Presentation	2004/10/15 High-power AlGaN/GaN dual-gate HEMT mixers Kenji SHIOJIMA, Takashi MAKIMURA, Toshihiko KOSUGI, Suehiro SUGITANI, Naoteru SHIGEKAWA, Hiroyasu ISHIKAWA, Takashi EGAWA,
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Abstract(in English)	We have demonstrated dual-gate AlGaN/GaN high-electron-mobility transistors on SiC substrates for high-power mixers and examined DC and up-conversion RF measurements with drain-source bias voltages (VDS) to analyze the possible output level. The 0.7x300 μm-gate device exhibited the maximum transconductance of 47 mS, maximum RF power of 19.6 dBm and up-conversion gain of 11 dB at 2 GHz when V_ = 15 V. For V_ of over 15 V, the devices occasionally broke down, because, although the device can handle more drain current, but the voltage swing reached the breakdown voltage of about 30 V. These results indicate that a Watt-class output mixer can be easily achieved with this simple dual-gate structure.
Keyword(in Japanese)	(See Japanese page)
Keyword(in English)	AlGaN/GaN HEMT / Dual-gate structure / High-power mixer
Paper #	ED2004-138,CPM2004-112,LQE2004-76
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Conference Information
Committee	LQE
Conference Date	2004/10/15(1days)
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Paper Information
Registration To	Lasers and Quantum Electronics (LQE)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	High-power AlGaN/GaN dual-gate HEMT mixers
Sub Title (in English)
Keyword(1)	AlGaN/GaN HEMT
Keyword(2)	Dual-gate structure
Keyword(3)	High-power mixer
1st Author's Name	Kenji SHIOJIMA
1st Author's Affiliation	NTT Corporation NTT Photonics Laboratories()
2nd Author's Name	Takashi MAKIMURA
2nd Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
3rd Author's Name	Toshihiko KOSUGI
3rd Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
4th Author's Name	Suehiro SUGITANI
4th Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
5th Author's Name	Naoteru SHIGEKAWA
5th Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
6th Author's Name	Hiroyasu ISHIKAWA
6th Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
7th Author's Name	Takashi EGAWA
7th Author's Affiliation	Research Center for Nano-Device and Syatem, Nagoya Institute of Technology
Date	2004/10/15
Paper #	ED2004-138,CPM2004-112,LQE2004-76
Volume (vol)	vol.104
Number (no)	362
Page	pp.pp.-
#Pages	4
Date of Issue