| Presentation | 2004/10/15 Stress Effects of Passivation Film on AlGaN/GaN-HEMT Characteristics Shinichi HOSHI, Toshiharu MARUI, Norihiko TODA, Katsuaki KAIFU, Juro MITA, Yoshiaki SANO, Shohei SEKI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN-HEMTs are promising device for microwave high power applications. AlGaN/GaN-HEMTs passivated by dielectric films such as Si_3N_4, show good frequency characteristics and high stability. However these passivation films have elastic stresses, which shift the FET characteristics due to the piezoelectric charge density around the edge of the gate. In this paper, we have investigated the stress effects of the passivation film on AlGaN/GaN-HEMT characteristics. We found that the large passivation stress increases the gate-leakage current and changes the threshold voltage towards the negative direction. These results indicate that the control of the passivation stress is an important consideration in AlGaN/GaN-HEMT fabrication. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN-HEMT / passivation film / stress / piezoelectric charge / gate-leakage current |
| Paper # | ED2004-137,CPM2004-111,LQE2004-75 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Stress Effects of Passivation Film on AlGaN/GaN-HEMT Characteristics |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN-HEMT |
| Keyword(2) | passivation film |
| Keyword(3) | stress |
| Keyword(4) | piezoelectric charge |
| Keyword(5) | gate-leakage current |
| 1st Author's Name | Shinichi HOSHI |
| 1st Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd.() |
| 2nd Author's Name | Toshiharu MARUI |
| 2nd Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 3rd Author's Name | Norihiko TODA |
| 3rd Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 4th Author's Name | Katsuaki KAIFU |
| 4th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 5th Author's Name | Juro MITA |
| 5th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 6th Author's Name | Yoshiaki SANO |
| 6th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| 7th Author's Name | Shohei SEKI |
| 7th Author's Affiliation | Corporate Research & Development Center, Oki Electric Industry Co., Ltd. |
| Date | 2004/10/15 |
| Paper # | ED2004-137,CPM2004-111,LQE2004-75 |
| Volume (vol) | vol.104 |
| Number (no) | 362 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |