| Presentation | 2004/10/15 Improvement in Performance of AlGaN/GaN HFETs by utilizing a Low-Temperature GaN Cap Layer Tadayoshi DEGUCHI, Eiji WAKI, Satoru ONO, Atsushi NAKAGAWA, Hiroyasu Ishikawa, Takashi EGAWA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN/GaN heterostructure field-effect transistors(HFETs) with a highly resistive low-temperature(LT) GaN cap layer on the conventional HFET epitaxial structure were fabricated. We found that this approach could significantly reduce the gate leakage current and achieve a high turn-on voltage for Schottky barrier diodes. HFETs with the LT-GaN layer showed a large gate voltage swing up to Vg=3V with higher linearity, as compared to conventional HFETs. Moreover, no current collapse was observed in the novel HFETs under pulse-mode gate stress. This results demonstrate that the application of a LT-GaN cap layer to serve as a gate insulator and to provide surface passivation is a promising technique for improving the surface stability of AlGaN/GaN HFETs. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN/GaN / HFET / gate leakage / current collapse / LT-GaN |
| Paper # | ED2004-136,CPM2004-110,LQE2004-74 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Improvement in Performance of AlGaN/GaN HFETs by utilizing a Low-Temperature GaN Cap Layer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN/GaN |
| Keyword(2) | HFET |
| Keyword(3) | gate leakage |
| Keyword(4) | current collapse |
| Keyword(5) | LT-GaN |
| 1st Author's Name | Tadayoshi DEGUCHI |
| 1st Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd.() |
| 2nd Author's Name | Eiji WAKI |
| 2nd Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 3rd Author's Name | Satoru ONO |
| 3rd Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 4th Author's Name | Atsushi NAKAGAWA |
| 4th Author's Affiliation | Research Laboratory, New Japan Radio Co., Ltd. |
| 5th Author's Name | Hiroyasu Ishikawa |
| 5th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 6th Author's Name | Takashi EGAWA |
| 6th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2004/10/15 |
| Paper # | ED2004-136,CPM2004-110,LQE2004-74 |
| Volume (vol) | vol.104 |
| Number (no) | 362 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |