| Presentation | 2004/10/15 Bowing Reduction in AlGaN/GaN HEMT Epiwafers Using Interlayers and its Characterization Masahiro SAKAI, Takashi EGAWA, Maosheng HAO, Hiroyasu ISHIKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We have demonstrated the reduction of epiwafer bowing in AlGaN/GaN HEMT structures on sapphire substrates using various interlayers. The interlayers including aluminum (high-temperature-grown AlGaN and low-temperature-deposited AlN) increased the epiwafer bowing independently of the growth temperature. On the other hand, InGaN-base interlayers and low-temperature-deposited interlayers decreased the epiwafer bowing. The multilayers as interlayers are effective for enhancing the suppression of epiwafer bowing. The minimum bowing value was lower than 10 μm, which was decreased by approximately 30 percent compared with that of AlGaN/GaN epiwafers without interlayers. Strain control in the epitaxial layers is important for reducing the epiwafer bowing. The interlayer insertion method may be a good solution for reducing the epiwafer bowing. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | bowing / epiwafer / interlayer / AlGaN/GaN HEMT |
| Paper # | ED2004-135,CPM2004-109,LQE2004-73 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Bowing Reduction in AlGaN/GaN HEMT Epiwafers Using Interlayers and its Characterization |
| Sub Title (in English) | |
| Keyword(1) | bowing |
| Keyword(2) | epiwafer |
| Keyword(3) | interlayer |
| Keyword(4) | AlGaN/GaN HEMT |
| 1st Author's Name | Masahiro SAKAI |
| 1st Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology:R&D Center, NGK INSULATORS, LTD.() |
| 2nd Author's Name | Takashi EGAWA |
| 2nd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 3rd Author's Name | Maosheng HAO |
| 3rd Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| 4th Author's Name | Hiroyasu ISHIKAWA |
| 4th Author's Affiliation | Research Center for Nano-Device and System, Nagoya Institute of Technology |
| Date | 2004/10/15 |
| Paper # | ED2004-135,CPM2004-109,LQE2004-73 |
| Volume (vol) | vol.104 |
| Number (no) | 362 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |