| Presentation | 2004/10/14 Low Frequency Noise Characteristics in SiGe Channel Heterostructure Dynamic Threshold MOSFET(HDTMOS) Yoshio KAWASHIMA, Akira INOUE, Haruyuki SORADA, Yoshihiko KANZAWA, Takahiro KAWASHIMA, Yoshihiro HARA, Akira ASAI, Takeshi TAKAGI, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | For realizing high performance analog CMOS, we have proposed the SiGe channel heterostructure DTMOS. It has larger transconductance (g_m) and lower low-frequency noise than those of Si-MOS. Further we have clarified the origin of low frequency noise and have found the way to reduce it. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | SiGe / heterostructure / DTMOS / l/fnoise |
| Paper # | ED2004-133,CPM2004-107,LQE2004-71 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Frequency Noise Characteristics in SiGe Channel Heterostructure Dynamic Threshold MOSFET(HDTMOS) |
| Sub Title (in English) | |
| Keyword(1) | SiGe |
| Keyword(2) | heterostructure |
| Keyword(3) | DTMOS |
| Keyword(4) | l/fnoise |
| 1st Author's Name | Yoshio KAWASHIMA |
| 1st Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd.() |
| 2nd Author's Name | Akira INOUE |
| 2nd Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| 3rd Author's Name | Haruyuki SORADA |
| 3rd Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| 4th Author's Name | Yoshihiko KANZAWA |
| 4th Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| 5th Author's Name | Takahiro KAWASHIMA |
| 5th Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| 6th Author's Name | Yoshihiro HARA |
| 6th Author's Affiliation | Communication Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| 7th Author's Name | Akira ASAI |
| 7th Author's Affiliation | Advanced Technology Research Laboratories, Matsushita Electric Industrial Co., Ltd. |
| 8th Author's Name | Takeshi TAKAGI |
| 8th Author's Affiliation | Advanced Devices Development Center, Matsushita Electric Industrial Co., Ltd. |
| Date | 2004/10/14 |
| Paper # | ED2004-133,CPM2004-107,LQE2004-71 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |