| Presentation | 2004/10/14 Observation of InN dots on N-polar GaN grown by RF-MBE : Investigation of growth mechanism of N-polar InN dots growth Naoki HASHIMOTO, Naohiro KIKUKAWA, Song-Bek CHE, Yoshihiro ISHITANI, Akihiko YOSHIKAWA, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We grew InN dots on N-polar GaN by RF-MBE, and investigated their growth mechanism. From RHEED analysis of InN growth, we found that lattice relaxation of InN layer, which was grown under N-rich condition, occurred at almost 1ML. AFM image after 1.74ML growth of InN showed uniformly formation of InN dots. Moreover diameter, height and density of them were estimated to be 12-18nm (average: 15.8nm), 0.3-1.6nm (average: 1.00nm) and 3.8×10^<11>cm^<-2>, respectively. Height of InN dots increased with InN layer thickness, but diameter of them didn't increase until coalescence of InN dots occurred. The size of InN dot became big under higher growth temperature because of enhancement of surface migration. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Indium nitride / Quantum dot / RF-MBE / RHEED / AFM |
| Paper # | ED2004-131,CPM2004-105,LQE2004-69 |
| Date of Issue |
| Conference Information | |
| Committee | LQE |
|---|---|
| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Observation of InN dots on N-polar GaN grown by RF-MBE : Investigation of growth mechanism of N-polar InN dots growth |
| Sub Title (in English) | |
| Keyword(1) | Indium nitride |
| Keyword(2) | Quantum dot |
| Keyword(3) | RF-MBE |
| Keyword(4) | RHEED |
| Keyword(5) | AFM |
| 1st Author's Name | Naoki HASHIMOTO |
| 1st Author's Affiliation | Department of Engineering, Chiba University:InN-Project as CREST-program of JST, Chiba University() |
| 2nd Author's Name | Naohiro KIKUKAWA |
| 2nd Author's Affiliation | Department of Engineering, Chiba University |
| 3rd Author's Name | Song-Bek CHE |
| 3rd Author's Affiliation | Department of Engineering, Chiba University:VBL, Chiba University:InN-Project as CREST-program of JST, Chiba University |
| 4th Author's Name | Yoshihiro ISHITANI |
| 4th Author's Affiliation | Department of Engineering, Chiba University:VBL, Chiba University:InN-Project as CREST-program of JST, Chiba University |
| 5th Author's Name | Akihiko YOSHIKAWA |
| 5th Author's Affiliation | Department of Engineering, Chiba University:VBL, Chiba University:InN-Project as CREST-program of JST, Chiba University |
| Date | 2004/10/14 |
| Paper # | ED2004-131,CPM2004-105,LQE2004-69 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |