Presentation 2004/10/14
Physical properties of transition metal and rare earth element doped GaN grown by MBE
Y.K. Zhou, M.S. Kim, S. Kimura, S.W. Choi, S. Emura, S. Hasegawa, H. Asahi,
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Abstract(in English) We have studied magnetic and optical properties of transition-metal (Cr, Mn) and rare-earth (Gd, Dy) doped GaN grown by radio frequency molecular beam epitaxy (RF-MBE). GaCrN showed the ferromagnetic characteristics at 7-400K. We observed the PL emission from GaCrN layers. GaGdN also showed the ferromagnetic characteristics at 7-400K. Sharp PL emission was observed for GaGdN due to the intra-atomic f-f-transitions. GaCrN-based ferromagnet /nonmagnet/ ferromagnet trilayer structures were grown, for the first time, by radio frequency molecular beam epitaxy, in which the magnetoresistive effect was confirmed.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Diluted magnetic semiconductor / GaN-based semiconductor / GaMnN / GaCrN / GaGdN / GaDyN
Paper # ED2004-127,CPM2004-101,LQE2004-65
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Committee LQE
Conference Date 2004/10/14(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Physical properties of transition metal and rare earth element doped GaN grown by MBE
Sub Title (in English)
Keyword(1) Diluted magnetic semiconductor
Keyword(2) GaN-based semiconductor
Keyword(3) GaMnN
Keyword(4) GaCrN
Keyword(5) GaGdN
Keyword(6) GaDyN
1st Author's Name Y.K. Zhou
1st Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University()
2nd Author's Name M.S. Kim
2nd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
3rd Author's Name S. Kimura
3rd Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
4th Author's Name S.W. Choi
4th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
5th Author's Name S. Emura
5th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
6th Author's Name S. Hasegawa
6th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
7th Author's Name H. Asahi
7th Author's Affiliation The Institute of Scientific and Industrial Research, Osaka University
Date 2004/10/14
Paper # ED2004-127,CPM2004-101,LQE2004-65
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 4
Date of Issue