Presentation 2004/10/14
Evaluation of deep levels in AlGaN on sapphire by Capacitance DLTS
Jiro OSAKA, Masato NISHIURA, Toru OKINO, Yutaka OHNO, Shigeru KISHIMOTO, Kouichi MAEZAWA, Takashi MIZUTANI,
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Abstract(in English) GaN-related compound semiconductors are expected to be used for future high-performance electron devices, and much studies of the effects of crystal quality on device characteristics are now on progress. However, there is no report on the deep levels, which is an indicator of crystal quality, of AlGaN which is indispensable to form hetero-structures. In this paper, we studied deep levels in HVPE-grown AlxGal-xN (; x =0.09 and 0.17) by using capacitance-DLTS method, for the first time to our knowledge. We found that there are three typical deep levels in AlGaN and that their characteristics depend on the Al content.
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Keyword(in English) AlGaN / DLTS / Deep Level / HVPE / Schottki Diode
Paper # ED2004-125,CPM2004-99,LQE2004-63
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Committee LQE
Conference Date 2004/10/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of deep levels in AlGaN on sapphire by Capacitance DLTS
Sub Title (in English)
Keyword(1) AlGaN
Keyword(2) DLTS
Keyword(3) Deep Level
Keyword(4) HVPE
Keyword(5) Schottki Diode
1st Author's Name Jiro OSAKA
1st Author's Affiliation School of Engineering, Nagoya University()
2nd Author's Name Masato NISHIURA
2nd Author's Affiliation School of Engineering, Nagoya University
3rd Author's Name Toru OKINO
3rd Author's Affiliation School of Engineering, Nagoya University
4th Author's Name Yutaka OHNO
4th Author's Affiliation School of Engineering, Nagoya University
5th Author's Name Shigeru KISHIMOTO
5th Author's Affiliation School of Engineering, Nagoya University
6th Author's Name Kouichi MAEZAWA
6th Author's Affiliation School of Engineering, Nagoya University
7th Author's Name Takashi MIZUTANI
7th Author's Affiliation School of Engineering, Nagoya University
Date 2004/10/14
Paper # ED2004-125,CPM2004-99,LQE2004-63
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 4
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