| Presentation | 2004/10/14 Electrical Characteristics of GaN/SiC Heterojunction diodes by molecular-beam epitaxy Yuki NAKANO, Jun SUDA, Tsunenobu KIMOTO, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Direct growth of GaN on misoriented 4H- and 6H-SiC (0001) Si-face substrates and electrical characteristics of n-GaN/p-SiC heterojunction mesa diodes are presented. GaN was grown by molecular-beam epitaxy (MBE) using elemental Ga and rf plasma-excited active nitrogen. SiC substrates misoriented 8° toward the [11-20] direction were used in this study. The surfaces of MBE-grown GaN layers have wavy features with peak-to-valley height of 30 nm. It was found that step bunching and large faceting toward [01-10] and [10-10] directions occurred during the growth of GaN. Lowering the growth temperature suppresses large faceting, and results in reduction of the peak-to-valley height to 3 nm. However, the surface still has the same undulating features (on a smaller length scale). Mesa diodes were fabricated from the grown GaN layers. The correlation between the diode electrical characteristics and GaN growth conditions is discussed. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | MBE / GaN / SiC / heterojunction diode |
| Paper # | ED2004-123,CPM2004-97,LQE2004-61 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
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| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Electrical Characteristics of GaN/SiC Heterojunction diodes by molecular-beam epitaxy |
| Sub Title (in English) | |
| Keyword(1) | MBE |
| Keyword(2) | GaN |
| Keyword(3) | SiC |
| Keyword(4) | heterojunction diode |
| 1st Author's Name | Yuki NAKANO |
| 1st Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University() |
| 2nd Author's Name | Jun SUDA |
| 2nd Author's Affiliation | PRESTO, Japan Science and Technology Agency |
| 3rd Author's Name | Tsunenobu KIMOTO |
| 3rd Author's Affiliation | Department of Electronic Science and Engineering, Kyoto University |
| Date | 2004/10/14 |
| Paper # | ED2004-123,CPM2004-97,LQE2004-61 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |