| Presentation | 2004/10/14 The Effect of Growth Pressure on material properties of p-type GaN Akinori Ubukata, Hiroki Tokunaga, Yoshiki Yano, Nakao Akutsu, Koh Matsumoto, Toshiaki Yamazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We investigated the effect of growth pressure on material properties of Mg-doped GaN. We found that the hole carrier concentration of p-type GaN grown at 300 Torr was more than one order of magnitude lower than that of p-type GaN grown at atmospheric pressure. In cross-sectional TEM observation, pyramidal defects were observed periodically. These defects were supposed to be inversion domains boundary defects. In this area, strong donor-acceptor emission peaks were observed in CL spectra. It indicates that the donor-like point defects were also generated, associated with IDB. These results may correspond to the electrical properties of p-GaN grown with different growth pressure. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Mg doping / point defect / inversion domain / MOVPE / atmospheric pressure growth |
| Paper # | ED2004-122,CPM2004-96,LQE2004-60 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The Effect of Growth Pressure on material properties of p-type GaN |
| Sub Title (in English) | |
| Keyword(1) | Mg doping |
| Keyword(2) | point defect |
| Keyword(3) | inversion domain |
| Keyword(4) | MOVPE |
| Keyword(5) | atmospheric pressure growth |
| 1st Author's Name | Akinori Ubukata |
| 1st Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation() |
| 2nd Author's Name | Hiroki Tokunaga |
| 2nd Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
| 3rd Author's Name | Yoshiki Yano |
| 3rd Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
| 4th Author's Name | Nakao Akutsu |
| 4th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
| 5th Author's Name | Koh Matsumoto |
| 5th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
| 6th Author's Name | Toshiaki Yamazaki |
| 6th Author's Affiliation | Compound Semiconductor Project, NIPPON SANSO Corporation |
| Date | 2004/10/14 |
| Paper # | ED2004-122,CPM2004-96,LQE2004-60 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |