Presentation 2004/10/14
Hydride Vapor Phase Epitaxy of Al-Containing Nitrides with High Growth Rate : Is It Possible to Grow AlN by Hydride Vapor Phase Epitaxy?
Yoshinao KUMAGAI, Akinori KOUKITU,
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Abstract(in English) In order to achieve hydride vapor phase epitaxy (HVPE) of AlN, a thermodynamic analysis and a preliminary experiment targeting preferential generation of AlCl_3, which does not react with quartz (SiO_2) reactor, by the reaction between Al metal and HCl gas at the Al source zone were performed. Regardless of the H_2 mole fraction in the carrier gas, preferential generation of AlCl_3 is possible by maintaining the source zone at approximately 500℃. Based on this finding, AlN was grown on sapphire substrates at 1100℃ using AlCl_3 and NH_3. The growth rate reached 122 μm/h at AlCl_3 input partial pressure of 2.0×10^<-3> atm and input V/III ratio of 2.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) AlN / HVPE / AlCl_3 / Quartz Reactor / Thermodynamic Analysis / High Growth Rate
Paper # ED2004-121,CPM2004-95,LQE2004-59
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Committee LQE
Conference Date 2004/10/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Hydride Vapor Phase Epitaxy of Al-Containing Nitrides with High Growth Rate : Is It Possible to Grow AlN by Hydride Vapor Phase Epitaxy?
Sub Title (in English)
Keyword(1) AlN
Keyword(2) HVPE
Keyword(3) AlCl_3
Keyword(4) Quartz Reactor
Keyword(5) Thermodynamic Analysis
Keyword(6) High Growth Rate
1st Author's Name Yoshinao KUMAGAI
1st Author's Affiliation Department of Applied Chemistry, Tokyo University of Agriculture and Technology()
2nd Author's Name Akinori KOUKITU
2nd Author's Affiliation Department of Applied Chemistry, Tokyo University of Agriculture and Technology
Date 2004/10/14
Paper # ED2004-121,CPM2004-95,LQE2004-59
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 6
Date of Issue