| Presentation | 2004/10/14 MOVPE growth of AlGaN with low dislocation density using rugged AlN epilayer Akira ISHIGA, Takashi ONISHI, Yuhuai LIU, Masaya HARAGUCHI, Noriyuki KUWANO, Tomohiko SHIBATA, Mitsuhiro TANAKA, Hideto MIYAKE, Kazumasa HIRAMATSU, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | AlGaN with high AlN molar fraction and low dislocation density is necessary for fabricating deep -UV emitters and detectors. In this study, the reduction of dislocation density of AlGaN in the whole area of surface was achieved by low-pressure MOVPE using continuous rugged epitaxial AlN substrate. The AlN molar fraction of the crack-free AlGaN is 0.51, and atomic steps in the surface are clearly observed by AFM. In addition, the dislocation density is estimated to be 8.8×10^7cm^<-2> from CL measurement, which is two orders lower than that of AlGaN grown on flat AlN epitaxial layer. The above results indicate that the dislocation density of AlGaN can be reduced greatly by adopting rugged AlN epitaxial substrate with continuous inclined facet. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | AlGaN / GaN / GaN / LP-MOVPE / epitaxial AlN film |
| Paper # | ED2004-120,CPM2004-94,LQE2004-58 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | MOVPE growth of AlGaN with low dislocation density using rugged AlN epilayer |
| Sub Title (in English) | |
| Keyword(1) | AlGaN |
| Keyword(2) | GaN |
| Keyword(3) | GaN |
| Keyword(4) | LP-MOVPE |
| Keyword(5) | epitaxial AlN film |
| 1st Author's Name | Akira ISHIGA |
| 1st Author's Affiliation | Faculty of Eng., Mie University() |
| 2nd Author's Name | Takashi ONISHI |
| 2nd Author's Affiliation | Faculty of Eng., Mie University |
| 3rd Author's Name | Yuhuai LIU |
| 3rd Author's Affiliation | Satellite Venture Business Lab., Mie University |
| 4th Author's Name | Masaya HARAGUCHI |
| 4th Author's Affiliation | Interdisciplinary Graduate School of Engineering Sciences, Kyusyu University |
| 5th Author's Name | Noriyuki KUWANO |
| 5th Author's Affiliation | Art, Science and Technology Center for Cooperative Reserch, Kyusyu University |
| 6th Author's Name | Tomohiko SHIBATA |
| 6th Author's Affiliation | NGK Insulators, Ltd. |
| 7th Author's Name | Mitsuhiro TANAKA |
| 7th Author's Affiliation | NGK Insulators, Ltd. |
| 8th Author's Name | Hideto MIYAKE |
| 8th Author's Affiliation | Faculty of Eng., Mie University |
| 9th Author's Name | Kazumasa HIRAMATSU |
| 9th Author's Affiliation | Faculty of Eng., Mie University |
| Date | 2004/10/14 |
| Paper # | ED2004-120,CPM2004-94,LQE2004-58 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |