Presentation 2004/10/14
Amorphous GaN Films Deposited on Al substrates by CS-MBE at Low Temperature
S. EGAWA, T. HONDA, H. HASEGAWA, H. KAWANISHI,
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Abstract(in English) Compound source molecular beam Epitaxy (CS-MBE) is one of the techniques to achieve a low-temperature deposition of amorphous GaN (a-GaN) films. Amorphous GaN Films are deposited on Al substrates by CS-MBE and are applied to GaN-based electroluminescent devices (ELDs) operating in UV/blue spectral regions. The Al substrates have a high thermal conductivity, which leads to the long-lifetime operation of GaN-based ELDs. The ELDs fabricated on Al substrates show a longer lifetime than that of the ELDs on glass substrates. It is due to a good thermal conductivity of Al substrates compared with Glass substrates. The introduction of a buffer layer deposited at RT improves the surface smoothness of a-GaN films.
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Keyword(in English) GaN / Amorphous / Low-temperature deposition / MBE
Paper # ED2004-119,CPM2004-93,LQE2004-57
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Committee LQE
Conference Date 2004/10/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
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Title (in English) Amorphous GaN Films Deposited on Al substrates by CS-MBE at Low Temperature
Sub Title (in English)
Keyword(1) GaN
Keyword(2) Amorphous
Keyword(3) Low-temperature deposition
Keyword(4) MBE
1st Author's Name S. EGAWA
1st Author's Affiliation Dept. of Electronic Engineering, Kogakuin University()
2nd Author's Name T. HONDA
2nd Author's Affiliation Dept. of Electronic Engineering, Kogakuin University
3rd Author's Name H. HASEGAWA
3rd Author's Affiliation Dept. of Electronic Engineering, Kogakuin University
4th Author's Name H. KAWANISHI
4th Author's Affiliation Dept. of Electronic Engineering, Kogakuin University
Date 2004/10/14
Paper # ED2004-119,CPM2004-93,LQE2004-57
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 4
Date of Issue