| Presentation | 2004/10/14 The influence of low temperature growth of GaN on Si(111) substrates Tokuo YODO, Takaaki FUKUYAMA, Hiroshi FUCHIGAMI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We grew GaN films on Si(111) substrates by ECR-plasma assisted MBE and investigated the optimum low temperature growth process of GaN. We found that RCA method was superior to lshizaka method as chemical etching of Si substrate before growth. AlN buffer layer grown at temperatures higher than 500℃ improved the crystalline quality of GaN films. The strong 391 nm-nitrogen plasma emission intensity also improved it greatly for low temperature growth process. The control of this 391 nm-nitrogen plasma emission intensity and the increase of V/III mole ratio during growth are key factors for low temperature growth process. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | GaN / ECR-plasma assisted MBE / low temperature growthprocess / Si(111) substrate / AlN buffer layer |
| Paper # | ED2004-118,CPM2004-92,LQE2004-56 |
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| Conference Information | |
| Committee | LQE |
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| Conference Date | 2004/10/14(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Paper Information | |
| Registration To | Lasers and Quantum Electronics (LQE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | The influence of low temperature growth of GaN on Si(111) substrates |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | ECR-plasma assisted MBE |
| Keyword(3) | low temperature growthprocess |
| Keyword(4) | Si(111) substrate |
| Keyword(5) | AlN buffer layer |
| 1st Author's Name | Tokuo YODO |
| 1st Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology() |
| 2nd Author's Name | Takaaki FUKUYAMA |
| 2nd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| 3rd Author's Name | Hiroshi FUCHIGAMI |
| 3rd Author's Affiliation | Electronics, Information and Communication Engineering, Osaka Institute of Technology |
| Date | 2004/10/14 |
| Paper # | ED2004-118,CPM2004-92,LQE2004-56 |
| Volume (vol) | vol.104 |
| Number (no) | 361 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |