Presentation 2004/10/14
Growth of GaN on 4H-SiC with different crystal planes
Yasuto MIYAKE, Akira HONSHIO, Tsukasa KITANO, Masataka IMURA, Kiyotaka NAKANO, Hideki KASUGAI, Takeshi KAWASHIMA, Kazuyoshi IIDA, Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI, Hiroyuki KINOSHITA, Hiromu SHIOMI,
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Abstract(in English) MOVPE growth of GaN and AlGaN on 4H-SiC having different planes were conducted. X-ray diffraction measurements showed that the GaN axis is exactly aligned with that of the SiC substrates. Strong dependence was observed for the FWHMs of X-ray rocking curves of GaN (0002) and (112^-0) diffraction on the tilting of the crystal planes.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) c axis inclination / GaN / XRD / AlGaN
Paper # ED2004-117,CPM2004-91,LQE2004-55
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Committee LQE
Conference Date 2004/10/14(1days)
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Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaN on 4H-SiC with different crystal planes
Sub Title (in English)
Keyword(1) c axis inclination
Keyword(2) GaN
Keyword(3) XRD
Keyword(4) AlGaN
1st Author's Name Yasuto MIYAKE
1st Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University()
2nd Author's Name Akira HONSHIO
2nd Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
3rd Author's Name Tsukasa KITANO
3rd Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
4th Author's Name Masataka IMURA
4th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
5th Author's Name Kiyotaka NAKANO
5th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
6th Author's Name Hideki KASUGAI
6th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
7th Author's Name Takeshi KAWASHIMA
7th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
8th Author's Name Kazuyoshi IIDA
8th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
9th Author's Name Motoaki IWAYA
9th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
10th Author's Name Satoshi KAMIYAMA
10th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
11th Author's Name Hiroshi AMANO
11th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
12th Author's Name Isamu AKASAKI
12th Author's Affiliation Faculty of Science and Technology, 2 1 st Century COE "Nano-Factory", Meijo University
13th Author's Name Hiroyuki KINOSHITA
13th Author's Affiliation SiXON Limited
14th Author's Name Hiromu SHIOMI
14th Author's Affiliation SiXON Limited
Date 2004/10/14
Paper # ED2004-117,CPM2004-91,LQE2004-55
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 5
Date of Issue