Presentation 2004/10/14
Group III nitrides grown on R-plane sapphire with different off-angle : Off-angle dependence
Akira HONSHIO, Masataka IMURA, Kazuyoshi IIDA, Yasuto MIYAKE, Hideki KASUGAI, Takeshi KAWASHIMA, Michinobu TSUDA, Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) Formerly, it was necessary to grow thick layers to obtain high quality GaN with a flat surface on R-plane sapphire substrate. We found that high-quality thin GaN layer with a flat surface can be grown on R-plane sapphire substrate by controlling the offset angle of the sapphire substrate.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) sapphire / R-plane / MOVPE / GaN
Paper # ED2004-116,CPM2004-90,LQE2004-54
Date of Issue

Conference Information
Committee LQE
Conference Date 2004/10/14(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Lasers and Quantum Electronics (LQE)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Group III nitrides grown on R-plane sapphire with different off-angle : Off-angle dependence
Sub Title (in English)
Keyword(1) sapphire
Keyword(2) R-plane
Keyword(3) MOVPE
Keyword(4) GaN
1st Author's Name Akira HONSHIO
1st Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University()
2nd Author's Name Masataka IMURA
2nd Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
3rd Author's Name Kazuyoshi IIDA
3rd Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
4th Author's Name Yasuto MIYAKE
4th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
5th Author's Name Hideki KASUGAI
5th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
6th Author's Name Takeshi KAWASHIMA
6th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
7th Author's Name Michinobu TSUDA
7th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University:Single Crystal Division, Kyocera Corporation
8th Author's Name Motoaki IWAYA
8th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
9th Author's Name Satoshi KAMIYAMA
9th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
10th Author's Name Hiroshi AMANO
10th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
11th Author's Name Isamu AKASAKI
11th Author's Affiliation Faculty of Science and Technology, Meijo University, 21st Century COE "Nano-factory", Meijo University
Date 2004/10/14
Paper # ED2004-116,CPM2004-90,LQE2004-54
Volume (vol) vol.104
Number (no) 361
Page pp.pp.-
#Pages 5
Date of Issue