| Presentation | 2005-06-24 Low Threshold Current Operation of 1540nm Wavelength GaInAsP/InP Strain-Compensated Quantum-Wire DFB Lasers Hideki YAGI, Koji MIURA, Yoshifumi NISHIMOTO, Dhanorm PLUMWONGROT, Kazuya OHIRA, Takeo MARUYAMA, Shigehisa ARAI, |
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| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | GaInAsP/InP distributed feedback (DFB) lasers consisting of strain-compensated quantum-wire active regions (wire width of 24nm, four-stacked quantum-wires) were realized by electron beam lithography, CH_4/H_2-reactive ion etching and organometallic vapor-phase-epitaxial regrowth for the first time. A threshold current as low as 2.7mA (threshold current density: 270A/cm^2) was attained for the stripe width of 3.0μm and the cavity length of 330μm under the room-temperature continuous-wave condition, which was attributed to a volume effect of the quantum-wire active region and moderately strong reflectivity of the DFB grating. From measurement of the lasing spectrum, single-mode operation with a sub-mode suppression ratio as high as 51dB was observed in the lasing wavelength of 1541nm. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Quantum-Wire Laser / DFB Laser / GaInAsP/InP / Strain-Compensated Quantum-Well / CH_4/H_2-RIE / OMVPE Regrowth |
| Paper # | OPE2005-18,LQE2005-17 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 2005/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Low Threshold Current Operation of 1540nm Wavelength GaInAsP/InP Strain-Compensated Quantum-Wire DFB Lasers |
| Sub Title (in English) | |
| Keyword(1) | Quantum-Wire Laser |
| Keyword(2) | DFB Laser |
| Keyword(3) | GaInAsP/InP |
| Keyword(4) | Strain-Compensated Quantum-Well |
| Keyword(5) | CH_4/H_2-RIE |
| Keyword(6) | OMVPE Regrowth |
| 1st Author's Name | Hideki YAGI |
| 1st Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST() |
| 2nd Author's Name | Koji MIURA |
| 2nd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 3rd Author's Name | Yoshifumi NISHIMOTO |
| 3rd Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 4th Author's Name | Dhanorm PLUMWONGROT |
| 4th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 5th Author's Name | Kazuya OHIRA |
| 5th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology |
| 6th Author's Name | Takeo MARUYAMA |
| 6th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
| 7th Author's Name | Shigehisa ARAI |
| 7th Author's Affiliation | Quantum Nanoelectronics Research Center, Tokyo Institute of Technology:JST-CREST |
| Date | 2005-06-24 |
| Paper # | OPE2005-18,LQE2005-17 |
| Volume (vol) | vol.105 |
| Number (no) | 142 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |