| Presentation | 2005-06-24 Fabrication of InP-based semiconductor photonic crystal by HI-ICP etching Kengo NOZAKI, Junichi HASHIMOTO, Toshihide IDE, Eiichi MIZUTA, Masahiro SHIGA, Toshihiko BABA, |
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| PDF Download Page |  PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We successfully formed the photonic crystal consisting of airholes with smooth sidewalls and high aspect ratio into GaInAsP/InP wafer by using inductively coupled plasma (ICP) etching with HI gaseous source. The HI gas allows the etching at a relatively low temperature of 70℃. Therefore, e-beam resist can be directly used as an etching mask. This results in easy patterning and reduction in sidewall roughness of airholes, compared with the process using an intermediate metal or dielectric mask. After we optimized the etching condition, we formed the 0.2μm-diameter airholes with an aspect ratio of over 13 and a sidewall roughness of less than 10nm. The room temperature lasing action was observed in the PC point defect laser formed into 1.55-μm-GaInAsP slab. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Photonic crystal / nanolaser / ICP plasma etching / hydro iodide / GaInAsP/InP |
| Paper # | OPE2005-15,LQE2005-14 |
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| Conference Information | |
| Committee | OPE |
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| Conference Date | 2005/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Optoelectronics (OPE) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of InP-based semiconductor photonic crystal by HI-ICP etching |
| Sub Title (in English) | |
| Keyword(1) | Photonic crystal |
| Keyword(2) | nanolaser |
| Keyword(3) | ICP plasma etching |
| Keyword(4) | hydro iodide |
| Keyword(5) | GaInAsP/InP |
| 1st Author's Name | Kengo NOZAKI |
| 1st Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering() |
| 2nd Author's Name | Junichi HASHIMOTO |
| 2nd Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering |
| 3rd Author's Name | Toshihide IDE |
| 3rd Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering |
| 4th Author's Name | Eiichi MIZUTA |
| 4th Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering |
| 5th Author's Name | Masahiro SHIGA |
| 5th Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering |
| 6th Author's Name | Toshihiko BABA |
| 6th Author's Affiliation | Yokohama National University, Department of Electrical and Computer Engineering |
| Date | 2005-06-24 |
| Paper # | OPE2005-15,LQE2005-14 |
| Volume (vol) | vol.105 |
| Number (no) | 142 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |