Presentation 2004/10/1
Assessment of Optical gain in Si-Ge nanocrystals Embedded in SiO_2 films
Chitrarekha CHAUDHARI, Osamu TAKEI, Yoshiyuki TASHIRO, Osamu HANAIZUMI,
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Abstract(in English) Assessment of optical gain in as-grown SiO_2 thin film containing silicon (Si) and Germanium (Ge) nanocrystals, grown by rf-sputtering, by applying the variable stripe length (VSL) method, is reported. The optical gain in the thin film is demonstrated at 400 nm, at which the film shows photoluminescence peak. The analysis of the experimental data, based on one dimensional amplifier model, extracts the gain value of 4.3 cm^<-1> for a 738 nm thick film, when excited by a continuous wave 325 nm wavelength He-Cd laser.
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Keyword(in English) Silicon Nanocrystals / Germanium Nanocrystals / Optical gain in thin films
Paper # OME2004-76,OPE2004-139
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Committee OPE
Conference Date 2004/10/1(1days)
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Language ENG
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Assessment of Optical gain in Si-Ge nanocrystals Embedded in SiO_2 films
Sub Title (in English)
Keyword(1) Silicon Nanocrystals
Keyword(2) Germanium Nanocrystals
Keyword(3) Optical gain in thin films
1st Author's Name Chitrarekha CHAUDHARI
1st Author's Affiliation Satellite Venture Business Laboratory, Gunma University()
2nd Author's Name Osamu TAKEI
2nd Author's Affiliation Department of Electronic Engineering, Faculty of Engineering, Gunma University
3rd Author's Name Yoshiyuki TASHIRO
3rd Author's Affiliation Department of Electronic Engineering, Faculty of Engineering, Gunma University
4th Author's Name Osamu HANAIZUMI
4th Author's Affiliation Department of Electronic Engineering, Faculty of Engineering, Gunma University
Date 2004/10/1
Paper # OME2004-76,OPE2004-139
Volume (vol) vol.104
Number (no) 333
Page pp.pp.-
#Pages 4
Date of Issue