Presentation 2004-11-04
Low Driving-Voltage Operation of 40 Gbit/s Electroabsorption Modulators
Hideki Fukano, Munehisa Tamura, Takayuki Yamanaka, Yasuhiro Kondo,
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Abstract(in English) We have successfully fabricated a 40-Gbit/s InGaAlAs/InAlAs EAM with an RF extinction ratio of 1 0.5 dB, and driven by a peak-to-peak voltage as low as 0.79V. This device also showed a 3-dB-down bandwidth of 46 GHz. These excellent characteristics were achieved by employing strain-compensated InGaAlAs/InAlAs MQW layers having excellent extinction characteristics and by widening the 3-dB-down bandwidth, which was achieved by reducing MQW core width and using a polyimide-burried device structure with a low-loss microwave feed line for low-driving voltage operation. A record V_/bandwidth figure of merit is achieved.
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Keyword(in English) InGaAlAs / Electroabsorption / Modulator / Low Driving-Voltage
Paper # OCS2004-91,OPE2004-156,LQE2004-100
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Conference Information
Committee OCS
Conference Date 2004/10/28(1days)
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Registration To Optical Communication Systems (OCS)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Low Driving-Voltage Operation of 40 Gbit/s Electroabsorption Modulators
Sub Title (in English)
Keyword(1) InGaAlAs
Keyword(2) Electroabsorption
Keyword(3) Modulator
Keyword(4) Low Driving-Voltage
1st Author's Name Hideki Fukano
1st Author's Affiliation NTT Photonics Laboratories, NTT Corporation()
2nd Author's Name Munehisa Tamura
2nd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
3rd Author's Name Takayuki Yamanaka
3rd Author's Affiliation NTT Photonics Laboratories, NTT Corporation
4th Author's Name Yasuhiro Kondo
4th Author's Affiliation NTT Photonics Laboratories, NTT Corporation
Date 2004-11-04
Paper # OCS2004-91,OPE2004-156,LQE2004-100
Volume (vol) vol.104
Number (no) 410
Page pp.pp.-
#Pages 4
Date of Issue