Presentation 2005/2/24
Carbon Nanotube Transistor : Top-down Growth Control for Device Integration
Masahiko ISHIDA, Hiroo HONGO, Fumiyuki NIHEY, Yukinori OCHIAI,
PDF Download Page PDF download Page Link
Abstract(in Japanese) (See Japanese page)
Abstract(in English) We report the novel synthesis method of iron nanoparticles that can easily control both position and diameter significantly smaller than the lithography limit, and also demonstrate diameter- and position-controlled single-walled carbon nanotube (SWNT) growth from the nanoparticles.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) Single-walled carbon nanotube / Field effect transistor / Electron-beam lithography / Calixarene
Paper # EID2004-88,OME2004-135
Date of Issue

Conference Information
Committee EID
Conference Date 2005/2/24(1days)
Place (in Japanese) (See Japanese page)
Place (in English)
Topics (in Japanese) (See Japanese page)
Topics (in English)
Chair
Vice Chair
Secretary
Assistant

Paper Information
Registration To Electronic Information Displays (EID)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Carbon Nanotube Transistor : Top-down Growth Control for Device Integration
Sub Title (in English)
Keyword(1) Single-walled carbon nanotube
Keyword(2) Field effect transistor
Keyword(3) Electron-beam lithography
Keyword(4) Calixarene
1st Author's Name Masahiko ISHIDA
1st Author's Affiliation NEC Fundamental and Environmental Research Laboratories()
2nd Author's Name Hiroo HONGO
2nd Author's Affiliation NEC Fundamental and Environmental Research Laboratories
3rd Author's Name Fumiyuki NIHEY
3rd Author's Affiliation NEC Fundamental and Environmental Research Laboratories
4th Author's Name Yukinori OCHIAI
4th Author's Affiliation NEC Fundamental and Environmental Research Laboratories
Date 2005/2/24
Paper # EID2004-88,OME2004-135
Volume (vol) vol.104
Number (no) 687
Page pp.pp.-
#Pages 5
Date of Issue