Presentation 2005/1/21
High-Luminance Red-Emitting TFEL Device Using Eu-Activated (Ga_2O_3)_<1-X>-(SnO_2)_X Thin Films Prepared by PLD
Youhei Minamino, Toshihiro Miyata, Tadatsugu Minami,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) High-luminance red-emitting thin-film electroluminescent devices were fabricated using Eu-activated (Ga_2O_3)_<1-X>-(SnO_2)_X multicomponent oxide phosphors. Various amorphous ((Ga_2O_3)_<1-X>-(SnO_2)_X) : Eu phosphor thin films were prepared using pulsed laser deposition by varying the SnO_2 content (X). A luminance of 2325 cd/m^2 was obtained in a TFEL device fabricated using an amorphous ((Ga_2O_3)_<0.67>-(SnO_2)_<0.33>) : Eu thin film (i.e., prepared with a SnO_2 content of 33mol.% and a Eu content of 6 at.%) postannealed at 750℃ and driven at 1kHz.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) electroluminescence / TFEL / oxide phosphor thin film / pulsed laser deposition
Paper # EID2004-60
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Committee EID
Conference Date 2005/1/21(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) High-Luminance Red-Emitting TFEL Device Using Eu-Activated (Ga_2O_3)_<1-X>-(SnO_2)_X Thin Films Prepared by PLD
Sub Title (in English)
Keyword(1) electroluminescence
Keyword(2) TFEL
Keyword(3) oxide phosphor thin film
Keyword(4) pulsed laser deposition
1st Author's Name Youhei Minamino
1st Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology()
2nd Author's Name Toshihiro Miyata
2nd Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
3rd Author's Name Tadatsugu Minami
3rd Author's Affiliation Optoelectronic Device System R&D Center, Kanazawa Institute of Technology
Date 2005/1/21
Paper # EID2004-60
Volume (vol) vol.104
Number (no) 621
Page pp.pp.-
#Pages 4
Date of Issue