| Presentation | 2005/4/15 Metal Induced Lateral Crystallization of Doped Amorphous Si Films Gou NAKAGAWA, Noritoshi SHIBATA, Tanemasa ASANO, |
|---|---|
| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | The characteristics of metal induced lateral crystallization (MILC) of B(BF_2)- or P-doped a-Si thin films have been investigated. Lateral growth rate in B-doped films was increased compared with that in non-doped films (conventional MILC) at 590℃. It was also found that lateral growth rate is proportional to the B dose. At low annealing temperature, needle-like Si crystallites were observed to frequently change the growth direction and branching of the crystallite during growth frequently took place in B-doped films. Besides, B-doped a-Si was densely crystallized from Ni-supply region to growth front because the epitaxial growth of a-Si from needle-like Si crystallites was enhanced by the doping effect of B atoms. On the other hand, lateral growth rate in P-doped films was decreased when the P dose is 2×10^<15>cm^<-2>. This result indicates that P atoms introduced into a-Si interrupt the diffusion of Ni. It is noteworthy that the side of needle-like Si crystallites in P-doped films are covered with the epitaxially grown crystals and consequently straightly grow. This result suggests that "turn or branch" of NiSi_2 precipitate is prevented because the width of the crystallite broadens by the epitaxial growth as soon as the needle-like Si grows by MILC |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | poly-Si / metal induced lateral crystallization / dopant / needle-like Si / NiSi_2 / epitaxial growth |
| Paper # | ED2005-15,SDM2005-15,OME2005-15 |
| Date of Issue |
| Conference Information | |
| Committee | OME |
|---|---|
| Conference Date | 2005/4/15(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
| Vice Chair | |
| Secretary | |
| Assistant | |
| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
|---|---|
| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Metal Induced Lateral Crystallization of Doped Amorphous Si Films |
| Sub Title (in English) | |
| Keyword(1) | poly-Si |
| Keyword(2) | metal induced lateral crystallization |
| Keyword(3) | dopant |
| Keyword(4) | needle-like Si |
| Keyword(5) | NiSi_2 |
| Keyword(6) | epitaxial growth |
| 1st Author's Name | Gou NAKAGAWA |
| 1st Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology() |
| 2nd Author's Name | Noritoshi SHIBATA |
| 2nd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| 3rd Author's Name | Tanemasa ASANO |
| 3rd Author's Affiliation | Center for Microelectronic Systems, Kyushu Institute of Technology |
| Date | 2005/4/15 |
| Paper # | ED2005-15,SDM2005-15,OME2005-15 |
| Volume (vol) | vol.105 |
| Number (no) | 23 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |