Presentation 2005/4/15
Epitaxial Growth of Fe_3Si Thin Layer on Si Substrate
Taizoh SADOH, Hisashi TAKEUCHI, Atsushi KENJO, Masanobu MIYAO,
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Abstract(in English) Epitaxial growth of ferromagnetic silicide Fe_3Si on Si was investigated. The Fe_3Si was formed by the molecular beam epitaxy technique with the substrate temperatures of 30-300℃. The results of XRD and TEM measurements suggested that Fe_3Si (111) layers were epitaxially grown on Si (111), although random Fe_3Si crystal grains were formed on Si (100). Magnetic properties of the formed layers were also discussed.
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Keyword(in English) Ferromagnetic silicide / Fe_3Si / Molecular beam epitaxy
Paper # ED2005-13,SDM2005-13,OME2005-13
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Committee OME
Conference Date 2005/4/15(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Epitaxial Growth of Fe_3Si Thin Layer on Si Substrate
Sub Title (in English)
Keyword(1) Ferromagnetic silicide
Keyword(2) Fe_3Si
Keyword(3) Molecular beam epitaxy
1st Author's Name Taizoh SADOH
1st Author's Affiliation Department of Electronics, Kyushu University()
2nd Author's Name Hisashi TAKEUCHI
2nd Author's Affiliation Department of Electronics, Kyushu University
3rd Author's Name Atsushi KENJO
3rd Author's Affiliation Department of Electronics, Kyushu University
4th Author's Name Masanobu MIYAO
4th Author's Affiliation Department of Electronics, Kyushu University
Date 2005/4/15
Paper # ED2005-13,SDM2005-13,OME2005-13
Volume (vol) vol.105
Number (no) 23
Page pp.pp.-
#Pages 4
Date of Issue