| Presentation | 2005/6/17 Ultra-violet Response of GaN SAW Device Chinami KANESHIRO, Takahiro MIZUSAWA, Keishin KOH, Kazumi NISHIMURA, Naoteru SHIGEKAWA, Kohji HOHKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | In this paper, in order to realize a GaN UV sensor, we carried out basic experiments of UV response using SAW device fabricated on GaN epitaxial wafer. We obtained experimental results which show charge transfer of photo induced carriers by surface acoustic wave. The effect of the side gate was experimentally shown in the SAW device on the GaN epitaxial layer with relatively conductivity. These results indicate that the carriers in GaN layer are controlled by the electric field of SAW or side gate. Moreover, the DC component was detected in the transfer waves under the UV irradiation. Also, we observed polarity changing of DC component in propagation wave of another acoustic wave mode. We consider that the polarity changing of DC component is due to unbalance of transfer carriers, such electrons and holes. These experimental results imply that the generated electron-hole carriers by UV irradiation are transferred differently by acoustic waves. It is indicated that the observation of DC component by different acoustic wave propagation mode is effective to recognize the wave length and UV intensity. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | UV sensor / GaN / SAW device / Charge transfer |
| Paper # | EMD2005-19,CPM2005-58,OME2005-33 |
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| Committee | OME |
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| Conference Date | 2005/6/17(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Organic Material Electronics (OME) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Ultra-violet Response of GaN SAW Device |
| Sub Title (in English) | |
| Keyword(1) | UV sensor |
| Keyword(2) | GaN |
| Keyword(3) | SAW device |
| Keyword(4) | Charge transfer |
| 1st Author's Name | Chinami KANESHIRO |
| 1st Author's Affiliation | Faculty of Engineering, Kanagawa Institute of Technology() |
| 2nd Author's Name | Takahiro MIZUSAWA |
| 2nd Author's Affiliation | Faculty of Engineering, Kanagawa Institute of Technology |
| 3rd Author's Name | Keishin KOH |
| 3rd Author's Affiliation | Faculty of Engineering, Kanagawa Institute of Technology |
| 4th Author's Name | Kazumi NISHIMURA |
| 4th Author's Affiliation | NTT Photonics Laboratories |
| 5th Author's Name | Naoteru SHIGEKAWA |
| 5th Author's Affiliation | NTT Photonics Laboratories |
| 6th Author's Name | Kohji HOHKAWA |
| 6th Author's Affiliation | Faculty of Engineering, Kanagawa Institute of Technology |
| Date | 2005/6/17 |
| Paper # | EMD2005-19,CPM2005-58,OME2005-33 |
| Volume (vol) | vol.105 |
| Number (no) | 141 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |