Presentation 2005/6/17
Study on High Frequency SAW Device Fabricated on Epitaxitially grown GaN
Manabu YOKOTA, Masaya WADA, Chinami KANESHIRO, Kazumi NISHIMURA, Naoteru SHIGEKAWA, Kohji HOHKAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) In this paper, we study on high frequency SAW device fabricated on GaN epitaxitial layer. We carried out basic experiments of frequency characteristics and dispersion characteristics using test device. We observed acoustic waves which differ from SAW and propagate in GaN layer with guide mode. The experimental results shows that the waves of layer guide mode are dependence on crystalline of GaN layer and the relation between SAW wave length and thickness of GaN layer. It is indicated that the high frequency device using layer mode are realized by design of parameters, such as IDT, layer thickness, and so on.
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Keyword(in English) GaN / High frequency acoustic device / MOCVD
Paper # EMD2005-18,CPM2005-57,OME2005-32
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Committee OME
Conference Date 2005/6/17(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Study on High Frequency SAW Device Fabricated on Epitaxitially grown GaN
Sub Title (in English)
Keyword(1) GaN
Keyword(2) High frequency acoustic device
Keyword(3) MOCVD
1st Author's Name Manabu YOKOTA
1st Author's Affiliation Faculty of Engineering, Kanagawa Institute of Technology()
2nd Author's Name Masaya WADA
2nd Author's Affiliation Faculty of Engineering, Kanagawa Institute of Technology
3rd Author's Name Chinami KANESHIRO
3rd Author's Affiliation Faculty of Engineering, Kanagawa Institute of Technology
4th Author's Name Kazumi NISHIMURA
4th Author's Affiliation NTT Photonics Laboratories
5th Author's Name Naoteru SHIGEKAWA
5th Author's Affiliation NTT Photonics Laboratories
6th Author's Name Kohji HOHKAWA
6th Author's Affiliation Faculty of Engineering, Kanagawa Institute of Technology
Date 2005/6/17
Paper # EMD2005-18,CPM2005-57,OME2005-32
Volume (vol) vol.105
Number (no) 141
Page pp.pp.-
#Pages 6
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