Presentation 2005/5/20
Heat-Resistant Characteristics of Organic Field-Effect Transistors with Polyimide Gate Insulators
Tsuyoshi SEKITANI, Yusaku Kato, Shingo IBA, Takayasu SAKURAI, Takao SOMEYA,
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Abstract(in English) We have fabricated pentacene field-effect transistors (FETs) on polyimide-sheet films with polyimide gate dielectric layers, and investigated the high-temperature performance. It is found that the mobility of the present FETs is slightly enhanced when the device is heated from room temperature to 160℃. Furthermore, after the removal of annealing temperatures up to 160℃, the transistor characteristic of mobility and on/off current ratio show no significant changes, demonstration the excellent thermal stability of the present organic FETs.
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Keyword(in English) Organic Field-Effect Transistor / Pentacene / Polyimide Gate insulator / Heat-Resistance
Paper # OME2005-20
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Committee OME
Conference Date 2005/5/20(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Heat-Resistant Characteristics of Organic Field-Effect Transistors with Polyimide Gate Insulators
Sub Title (in English)
Keyword(1) Organic Field-Effect Transistor
Keyword(2) Pentacene
Keyword(3) Polyimide Gate insulator
Keyword(4) Heat-Resistance
1st Author's Name Tsuyoshi SEKITANI
1st Author's Affiliation Quantum-Phase Electronics Center, University of Tokyo()
2nd Author's Name Yusaku Kato
2nd Author's Affiliation Quantum-Phase Electronics Center, University of Tokyo
3rd Author's Name Shingo IBA
3rd Author's Affiliation Quantum-Phase Electronics Center, University of Tokyo
4th Author's Name Takayasu SAKURAI
4th Author's Affiliation Center of Collaborative Research, University of Tokyo
5th Author's Name Takao SOMEYA
5th Author's Affiliation Quantum-Phase Electronics Center, University of Tokyo
Date 2005/5/20
Paper # OME2005-20
Volume (vol) vol.105
Number (no) 103
Page pp.pp.-
#Pages 4
Date of Issue