Presentation 2005/1/21
Investigation of the interfacial electrostatic phenomena and its modification by the surface treatment
Takaaki MANAKA, Ryosuke TAMURA, Eunju LIM, Mitsumasa IWAMOTO,
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Abstract(in English) The investigation and the control of the electrostatic interfacial phenomena is of specially importance to the field of organic electronic applications. Negative potential was formed across the pentacene films deposited on Al surface. As a result of the SHG spectrum of the pentacene/Al structure, distinct peak as observed at 620 nm, which is the main peak position of the absorption spectrum. This indicates that the electric dipolar SHG process was activated by the surface potential. In the bottom contact pentacene FET, decrease of the threshold voltage and the increase of the mobility was confirmed by the UV/ozone treatment of the surface of the source and drain electrode. As a result of the surface potential measurement, positive potential was observed for the pentacene films deposited on UV/ozone treated Au surface. The formation of the positive surface potential indicates that the accumulation of the holes around the electrode. This accumulation of the holes leads to the decrease of the threshold voltage.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) pentacene / surface potential / nonlinear optics(SHG) / organic FET / surface treatment
Paper # OME2004-128
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Conference Information
Committee OME
Conference Date 2005/1/21(1days)
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Registration To Organic Material Electronics (OME)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Investigation of the interfacial electrostatic phenomena and its modification by the surface treatment
Sub Title (in English)
Keyword(1) pentacene
Keyword(2) surface potential
Keyword(3) nonlinear optics(SHG)
Keyword(4) organic FET
Keyword(5) surface treatment
1st Author's Name Takaaki MANAKA
1st Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology()
2nd Author's Name Ryosuke TAMURA
2nd Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
3rd Author's Name Eunju LIM
3rd Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
4th Author's Name Mitsumasa IWAMOTO
4th Author's Affiliation Faculty of Engineering, Tokyo Institute of Technology
Date 2005/1/21
Paper # OME2004-128
Volume (vol) vol.104
Number (no) 641
Page pp.pp.-
#Pages 4
Date of Issue