Presentation 2005-01-27
Evaluation of LVP observability in 90nm devices, and development of on-chip elements for LVP measurement
Junpei Nonaka, Shinichi Wada,
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Abstract(in English) For devices after 90nm generation, LVP measurement will be difficult, because transistor sizes are less than laser diffraction limited. In this study, we evaluated ease of LVP measurement for 90nm devices. We also considered relationship between voltage waveforms and LVP waveforms through LVP measurement and device simulation. For devices after 90nm, inserting on-chip elements for LVP measurement into circuit will ease LVP measurement. We propose a new element structure to ease LVP measurement, and evaluate it. As a result, LVP waveform amplitudes for the elements are 30-50% larger than those for the same size inverters. Ease of LVP measurement is improved by using the proposed structure.
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Keyword(in English) LVP / 90nm / device simulation / observability / pad
Paper # CPM2004-156,ICD2004-201
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Conference Date 2005/1/20(1days)
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Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Evaluation of LVP observability in 90nm devices, and development of on-chip elements for LVP measurement
Sub Title (in English)
Keyword(1) LVP
Keyword(2) 90nm
Keyword(3) device simulation
Keyword(4) observability
Keyword(5) pad
1st Author's Name Junpei Nonaka
1st Author's Affiliation Test Analysis Technology Development Division, NEC Electronics Corporation()
2nd Author's Name Shinichi Wada
2nd Author's Affiliation Test Analysis Technology Development Division, NEC Electronics Corporation
Date 2005-01-27
Paper # CPM2004-156,ICD2004-201
Volume (vol) vol.104
Number (no) 628
Page pp.pp.-
#Pages 6
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