Presentation | 2005/5/20 Growth of GaNAs by using atomic hydrogen generated by using RF-plasma : Growth of GaNAs by using atomic hydrogen and effect on GaInNAs/GaAs QW of RTA Kazuya MITO, Masayuki YAMAMORI, Hiroyasu ISHIKAWA, Takashi EGAWA, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | The effect on GaNAs of atomic H generated by using cracking cell is reported. In this experiment, we investigate the effect on GaNAs of atomic H generated by using RF-plasma. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | CBE / GaNAs / GaInNAs / RTA / RF-plasma |
Paper # | ED2005-57,CPM2005-49,SDM2005-57 |
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Conference Information | |
Committee | SDM |
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Conference Date | 2005/5/20(1days) |
Place (in Japanese) | (See Japanese page) |
Place (in English) | |
Topics (in Japanese) | (See Japanese page) |
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Paper Information | |
Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Growth of GaNAs by using atomic hydrogen generated by using RF-plasma : Growth of GaNAs by using atomic hydrogen and effect on GaInNAs/GaAs QW of RTA |
Sub Title (in English) | |
Keyword(1) | CBE |
Keyword(2) | GaNAs |
Keyword(3) | GaInNAs |
Keyword(4) | RTA |
Keyword(5) | RF-plasma |
1st Author's Name | Kazuya MITO |
1st Author's Affiliation | Nagoya Institute Technology() |
2nd Author's Name | Masayuki YAMAMORI |
2nd Author's Affiliation | Nagoya Institute Technology |
3rd Author's Name | Hiroyasu ISHIKAWA |
3rd Author's Affiliation | Nagoya Institute Technology |
4th Author's Name | Takashi EGAWA |
4th Author's Affiliation | Nagoya Institute Technology |
Date | 2005/5/20 |
Paper # | ED2005-57,CPM2005-49,SDM2005-57 |
Volume (vol) | vol.105 |
Number (no) | 94 |
Page | pp.pp.- |
#Pages | 5 |
Date of Issue |