Presentation 2005/5/20
Growth of GaNAs by using atomic hydrogen generated by using RF-plasma : Growth of GaNAs by using atomic hydrogen and effect on GaInNAs/GaAs QW of RTA
Kazuya MITO, Masayuki YAMAMORI, Hiroyasu ISHIKAWA, Takashi EGAWA,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) The effect on GaNAs of atomic H generated by using cracking cell is reported. In this experiment, we investigate the effect on GaNAs of atomic H generated by using RF-plasma.
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Keyword(in English) CBE / GaNAs / GaInNAs / RTA / RF-plasma
Paper # ED2005-57,CPM2005-49,SDM2005-57
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Committee SDM
Conference Date 2005/5/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Growth of GaNAs by using atomic hydrogen generated by using RF-plasma : Growth of GaNAs by using atomic hydrogen and effect on GaInNAs/GaAs QW of RTA
Sub Title (in English)
Keyword(1) CBE
Keyword(2) GaNAs
Keyword(3) GaInNAs
Keyword(4) RTA
Keyword(5) RF-plasma
1st Author's Name Kazuya MITO
1st Author's Affiliation Nagoya Institute Technology()
2nd Author's Name Masayuki YAMAMORI
2nd Author's Affiliation Nagoya Institute Technology
3rd Author's Name Hiroyasu ISHIKAWA
3rd Author's Affiliation Nagoya Institute Technology
4th Author's Name Takashi EGAWA
4th Author's Affiliation Nagoya Institute Technology
Date 2005/5/20
Paper # ED2005-57,CPM2005-49,SDM2005-57
Volume (vol) vol.105
Number (no) 94
Page pp.pp.-
#Pages 5
Date of Issue