Presentation 2005/5/20
MOVPE of GaN on R-plane sapphire with high-growth rate
Hiroko FURUKAWA, Yoshizane OKADOME, Yousuke TSUCHIYA, Akira HONSHIO, Michinobu TSUDA, Motoaki IWAYA, Satoshi KAMIYAMA, Hiroshi AMANO, Isamu AKASAKI,
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Abstract(in Japanese) (See Japanese page)
Abstract(in English) A-plane GaN was grown on R-Plane sapphire by MOVPE. Growth rate higher than 50μm/h was achieved. A-plane GaN thus obtained shows flat surface and high-crystalline quality.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) R-plane Sapphire / A-plane GaN / high-growth rate
Paper # ED2005-54,CPM2005-46,SDM2005-54
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Conference Information
Committee SDM
Conference Date 2005/5/20(1days)
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Paper Information
Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) MOVPE of GaN on R-plane sapphire with high-growth rate
Sub Title (in English)
Keyword(1) R-plane Sapphire
Keyword(2) A-plane GaN
Keyword(3) high-growth rate
1st Author's Name Hiroko FURUKAWA
1st Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University()
2nd Author's Name Yoshizane OKADOME
2nd Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
3rd Author's Name Yousuke TSUCHIYA
3rd Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
4th Author's Name Akira HONSHIO
4th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
5th Author's Name Michinobu TSUDA
5th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University:Single Crystal Division, Kyocera Corporation
6th Author's Name Motoaki IWAYA
6th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
7th Author's Name Satoshi KAMIYAMA
7th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
8th Author's Name Hiroshi AMANO
8th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
9th Author's Name Isamu AKASAKI
9th Author's Affiliation Faculty of Science and Technology, Meijo University, 21_ Century COE "Nano-factory", Meijo University
Date 2005/5/20
Paper # ED2005-54,CPM2005-46,SDM2005-54
Volume (vol) vol.105
Number (no) 94
Page pp.pp.-
#Pages 4
Date of Issue