Presentation 2005/5/20
Polarity determination of InN using KOH solutions
Daisuke MUTO, Tsutomu ARAKI, Hiroyuki NAOI, Yasushi NANISHI,
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Abstract(in English) We have succeeded in distinguishing the polarities of InN by wet etching using KOH solutions. In- and N-polar InN films were grown on (0001) sapphire substrates by RF-MBE. Each InN film was etched by a 10mol/l KOH solution for 20~120 min at room temperature. We found the N-polar InN was etched roughly and hexagonal pyramids surrounded by {10-1-1} facets appeared after longer term of etching. On the other hand, the In-polar InN was etched smoothly and hexagonal and dot type etch pits were observed after longer term of etching. These results confirm that the polarity of InN can be determined easily by wet etching using KOH solution.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) InN / Polarity / Wet etching / KOH / etch pit density / RF-MBE
Paper # ED2005-41,CPM2005-33,SDM2005-41
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Committee SDM
Conference Date 2005/5/20(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Polarity determination of InN using KOH solutions
Sub Title (in English)
Keyword(1) InN
Keyword(2) Polarity
Keyword(3) Wet etching
Keyword(4) KOH
Keyword(5) etch pit density
Keyword(6) RF-MBE
1st Author's Name Daisuke MUTO
1st Author's Affiliation Department of Photonics, Ritsumeikan University()
2nd Author's Name Tsutomu ARAKI
2nd Author's Affiliation Department of Photonics, Ritsumeikan University
3rd Author's Name Hiroyuki NAOI
3rd Author's Affiliation Center for Promotion of the COE Program, Ritsumeikan University
4th Author's Name Yasushi NANISHI
4th Author's Affiliation Department of Photonics, Ritsumeikan University
Date 2005/5/20
Paper # ED2005-41,CPM2005-33,SDM2005-41
Volume (vol) vol.105
Number (no) 94
Page pp.pp.-
#Pages 4
Date of Issue