Presentation | 2005/4/15 Epitaxial Growth of Fe_3Si Thin Layer on Si Substrate Taizoh SADOH, Hisashi TAKEUCHI, Atsushi KENJO, Masanobu MIYAO, |
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Abstract(in Japanese) | (See Japanese page) |
Abstract(in English) | Epitaxial growth of ferromagnetic silicide Fe_3Si on Si was investigated. The Fe_3Si was formed by the molecular beam epitaxy technique with the substrate temperatures of 30-300℃. The results of XRD and TEM measurements suggested that Fe_3Si (111) layers were epitaxially grown on Si (111), although random Fe_3Si crystal grains were formed on Si (100). Magnetic properties of the formed layers were also discussed. |
Keyword(in Japanese) | (See Japanese page) |
Keyword(in English) | Ferromagnetic silicide / Fe_3Si / Molecular beam epitaxy |
Paper # | ED2005-13,SDM2005-13,OME2005-13 |
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Committee | SDM |
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Conference Date | 2005/4/15(1days) |
Place (in Japanese) | (See Japanese page) |
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Registration To | Silicon Device and Materials (SDM) |
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Language | JPN |
Title (in Japanese) | (See Japanese page) |
Sub Title (in Japanese) | (See Japanese page) |
Title (in English) | Epitaxial Growth of Fe_3Si Thin Layer on Si Substrate |
Sub Title (in English) | |
Keyword(1) | Ferromagnetic silicide |
Keyword(2) | Fe_3Si |
Keyword(3) | Molecular beam epitaxy |
1st Author's Name | Taizoh SADOH |
1st Author's Affiliation | Department of Electronics, Kyushu University() |
2nd Author's Name | Hisashi TAKEUCHI |
2nd Author's Affiliation | Department of Electronics, Kyushu University |
3rd Author's Name | Atsushi KENJO |
3rd Author's Affiliation | Department of Electronics, Kyushu University |
4th Author's Name | Masanobu MIYAO |
4th Author's Affiliation | Department of Electronics, Kyushu University |
Date | 2005/4/15 |
Paper # | ED2005-13,SDM2005-13,OME2005-13 |
Volume (vol) | vol.105 |
Number (no) | 21 |
Page | pp.pp.- |
#Pages | 4 |
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