Presentation 2005/4/15
Characteristics of Field Effect Transistors using Poly-thiophene composite films
Miho SHIBAOI, Akitoshi KAWAZOE, Makoto YANO, Keiichi KANETO,
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Abstract(in English) Field effect transistors (FET) were fabricated using composite films consisting of regioregular poly (3-hexylthiophene), HT-PHT and fullerene (solubule fullerene : PCBM), in order to improve the performance of organic FET. The structure of FET was bottom contact type on Si/SiO2 substrate. The solution of HT-PHT and PCBM was dissolved in chloroform and mixed, followed by spin coating on the substrate. The electrical characteristics of FET were measured as the function of PCBM content. The preliminary results indicated that the FET mobilities decreased with increasing the content of PTBM and increased again at higher contents of PCMB. The present results did not show remarkable improvement of FET characteristic or n-type property by the mixing PCBM in HT-PHT.
Keyword(in Japanese) (See Japanese page)
Keyword(in English) field effect transistors / poly (3-hexylthiophene) / fullerene
Paper # ED2005-9,SDM2005-9,OME2005-9
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Conference Information
Committee SDM
Conference Date 2005/4/15(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Characteristics of Field Effect Transistors using Poly-thiophene composite films
Sub Title (in English)
Keyword(1) field effect transistors
Keyword(2) poly (3-hexylthiophene)
Keyword(3) fullerene
1st Author's Name Miho SHIBAOI
1st Author's Affiliation Graduate School of Life Science Systems Engineering()
2nd Author's Name Akitoshi KAWAZOE
2nd Author's Affiliation Graduate School of Life Science Systems Engineering
3rd Author's Name Makoto YANO
3rd Author's Affiliation Graduate School of Life Science Systems Engineering
4th Author's Name Keiichi KANETO
4th Author's Affiliation Graduate School of Life Science Systems Engineering
Date 2005/4/15
Paper # ED2005-9,SDM2005-9,OME2005-9
Volume (vol) vol.105
Number (no) 21
Page pp.pp.-
#Pages 4
Date of Issue