| 講演名 | 2005/6/23 Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels(Group IV Compound Semiconductors) , |
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| 抄録(英) | Strain and dislocation engineering for the growth of high quality hetero-epitaxial films is crucial for realizing high performance heterostructure-based electronic and opto-electronic devices. Here we demonstrate two novel epitaxial growth processes of strain-relaxed SiGe films on Si(001) substrates, both of which have potential to be applied to the growth of buffer layers in strained channel metal-oxide-semiconductor field effect transistors. Two-step strain relaxation procedure has realized considerably high degree of strain relaxation in spite of total film thickness less than 200nm. This procedure greatly suppresses the pile-up of misfit dislocations and creates a characteristic dislocation morphology in which dislocations exist dispersively at the first SiGe/Si substrate interface. We have also developed a method to form SiGe buffer layers by solid-phase intermixing of Ge and deposited-Si layers at high temperatures. In this case, strain in SiGe is relaxed predominantly by the pure-edge dislocation network buried at the SiGe/Si(001) interface. Thin SiGe buffer layers with reduced mosaicity and flat surface morphology can be obtained. Strain relaxation mechanisms from a viewpoint of dislocation behavior in the film are discussed. |
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| キーワード(英) | SiGe / Epitaxial Growth / Strain / Dislocation / High Mobility / Strained-Si |
| 資料番号 | ED2005-94,SDM2005-114 |
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| 研究会 | SDM |
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| 開催期間 | 2005/6/23(から1日開催) |
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| 申込み研究会 | Silicon Device and Materials (SDM) |
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| 本文の言語 | ENG |
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| タイトル（英） | Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels(Group IV Compound Semiconductors) |
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| キーワード(1)（和/英） | / SiGe |
| 第 1 著者 氏名（和/英） | / Shigeaki ZAIMA |
| 第 1 著者 所属（和/英） | Graduate School of Engineering, Nagoya University |
| 発表年月日 | 2005/6/23 |
| 資料番号 | ED2005-94,SDM2005-114 |
| 巻番号（vol） | vol.105 |
| 号番号（no） | 157 |
| ページ範囲 | pp.- |
| ページ数 | 4 |
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