Presentation	2005/6/21 A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs : The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs(Advanced Si Devices) Hyun Sik Kang, Seong Wan Ryu, Yang Kyu Choi,
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Abstract(in English)	Punchthrough characteristics are investigated for different gate structures on silicon-on-insulator (SOI) FinFET. The punchthrough voltage (V_) was measured and verified by 3-D Silvaco simulator for various fin widths, crucial parameter to govern short-channel effects. The simulated results show a good agreement to the experimental data. Thereafter, the punchthrough voltages for multiple-gate structures in the SOI FinFETs: conventional FinFET, II-gate FinFET, Ω-gate FinFET and all-around-gate FinFET, were simulated with the aid of the Silvaco simulator after verification with experimental data. When the overlapped area of the gate-channel straddling the body increases, leakage paths reduce, and the punchthrough voltages increase as a result. For aggressive device scaling, all-around gate is highly preferable.
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Keyword(in English)	Punchthrough / SOI / FinFET / Multiple-gate / Fin Width
Paper #	ED2005-81,SDM2005-101
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Conference Information
Committee	SDM
Conference Date	2005/6/21(1days)
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Paper Information
Registration To	Silicon Device and Materials (SDM)
Language	ENG
Title (in Japanese)	(See Japanese page)
Sub Title (in Japanese)	(See Japanese page)
Title (in English)	A Comprehensive Study of Punchthrough Characteristics in Multiple-Gate MOSFETs : The Trend of Punchthrough Voltages in Various Gate Shapes of SOI MOSFETs(Advanced Si Devices)
Sub Title (in English)
Keyword(1)	Punchthrough
Keyword(2)	SOI
Keyword(3)	FinFET
Keyword(4)	Multiple-gate
Keyword(5)	Fin Width
1st Author's Name	Hyun Sik Kang
1st Author's Affiliation	Dept. of EECS, KAIST()
2nd Author's Name	Seong Wan Ryu
2nd Author's Affiliation	Dept. of EECS, KAIST
3rd Author's Name	Yang Kyu Choi
3rd Author's Affiliation	Dept. of EECS, KAIST
Date	2005/6/21
Paper #	ED2005-81,SDM2005-101
Volume (vol)	vol.105
Number (no)	155
Page	pp.pp.-
#Pages	4
Date of Issue