| Presentation | 2005/6/21 ECR Ar/N_2 Plasma Nitridation of HfO_2 for High-k Gate Insulator Applications(Advanced ULSI Technology) Shunichiro OHMI, Tomoki KUROSE, Masaki SATOH, Takafumi UCHIKAWA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | HfSiON thin films formed by ECR Ar/N_2 plasma nitridation of HfO_2 films was investigated for high-k gate insulator applications. HfO_xN_y thin films formed by the ECR Ar/N_2 plasma nitridation (60s) of 1.5nm-thick HfO_2 films, which were deposited on the chemically oxidized Si(100) substrates, were found to be effective for suppressing the interfacial layer growth and/or crystallization during the post deposition annealing (PDA) in a N_2 ambient. After the PDA of 900℃ for 5min in the N_2 ambient, it was found that HfSiON film with relatively high dielectric constant was formed on the HfO_xN_y/Si interface by Si atoms diffusion. The EOT of 2.0nm with the leakage current density of 1.0×10^<-3>A/cm^2 (@V_ |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Electron Cyclotron Resonance (ECR) / Sputtering / Plasma Nitridation / Post Deposition Annealing (PDA) / high-k / HfO_xN_y |
| Paper # | ED2005-68,SDM2005-88 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/21(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | ENG |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | ECR Ar/N_2 Plasma Nitridation of HfO_2 for High-k Gate Insulator Applications(Advanced ULSI Technology) |
| Sub Title (in English) | |
| Keyword(1) | Electron Cyclotron Resonance (ECR) |
| Keyword(2) | Sputtering |
| Keyword(3) | Plasma Nitridation |
| Keyword(4) | Post Deposition Annealing (PDA) |
| Keyword(5) | high-k |
| Keyword(6) | HfO_xN_y |
| 1st Author's Name | Shunichiro OHMI |
| 1st Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology() |
| 2nd Author's Name | Tomoki KUROSE |
| 2nd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 3rd Author's Name | Masaki SATOH |
| 3rd Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| 4th Author's Name | Takafumi UCHIKAWA |
| 4th Author's Affiliation | Interdisciplinary Graduate School of Science and Engineering, Tokyo Institute of Technology |
| Date | 2005/6/21 |
| Paper # | ED2005-68,SDM2005-88 |
| Volume (vol) | vol.105 |
| Number (no) | 155 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |