| Presentation | 2005/6/3 Characterization of HfO_2 Thin Films Prepared from Hf(O-t-C_4H_9)_4 by Photo-Assisited MOCVD Takeshi KANASHIMA, Taizo TADA, Masaki TSUMORI, Masanori OKUYAMA, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Recently, high-k dielectrics for gate insulator gather much attention for next generation ULSI, and are frequently prepared by MOCVD. However, MOCVD has disadvantage of including carbon contamination in the deposited film. So, in order to enhance the decomposition of source material, VUV (vacuum ultra violet) light is used for enhancement of chemical reaction during deposition of HfO_2 thin film in the case of MOCVD process using HTB (Hf(O-t-C_4H_9)_4) and H_2O. The absorption spectra of HTB is calculated by molecular orbital calculation method. As a result, the absorption band exists in VUV region (around 150nm), and so HfO_2 thin films were deposited under the irradiation with VUV light of D_2 lamp. These prepared samples are measured by FT-IR to estimate the concentration of carbon. It shows that C-H peak drastically decreases. Moreover, C-V, J-V and DLTS characteristics shows capacitance is increased by irradiation with VUV light. RTA (rapid thermal annealing) was performed as a post-annealing. This result shows that capacitance is much increased by RTA in the case of photo-assisted CVD by irradiation with VUV light. AFM observation results shows that very smooth surface is obtained. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | HTB / DLTS / Photo-Assisted MOCVD / I-V / C-V / surface morphology |
| Paper # | SDM2005-79 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of HfO_2 Thin Films Prepared from Hf(O-t-C_4H_9)_4 by Photo-Assisited MOCVD |
| Sub Title (in English) | |
| Keyword(1) | HTB |
| Keyword(2) | DLTS |
| Keyword(3) | Photo-Assisted MOCVD |
| Keyword(4) | I-V |
| Keyword(5) | C-V |
| Keyword(6) | surface morphology |
| 1st Author's Name | Takeshi KANASHIMA |
| 1st Author's Affiliation | Area of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University() |
| 2nd Author's Name | Taizo TADA |
| 2nd Author's Affiliation | Area of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University |
| 3rd Author's Name | Masaki TSUMORI |
| 3rd Author's Affiliation | Area of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University |
| 4th Author's Name | Masanori OKUYAMA |
| 4th Author's Affiliation | Area of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka University |
| Date | 2005/6/3 |
| Paper # | SDM2005-79 |
| Volume (vol) | vol.105 |
| Number (no) | 109 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |