| Presentation | 2005/6/3 Chemical Bonding Features and Electrical Properties of Nitrogen Incorporated Y_2O_3-based Gate Dielectric Stacks Hiroyuki Abe, Hiroshi Nakagawa, Masahiro Taira, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Impact of NH_3 anneal on chemical structures and electrical properties of Y_2O_3/SiO_2 stack on Si(100) has been studied by x-ray photoelectron spectroscopy and electrical measurements of Al-gate MIS capacitors. Amorphous Y_2O_3 films were formed on 1-2nm-thick SiO_2, grown on p-Si(100) at 850℃ in dry O_2, and post deposition anneal (PDA) was performed in the temperature range from 500-800℃ in NH_3 ambient. PDAs in O_2, N_2 and NF_3 ambient were also made for comparative studies. In NH_3 PDA at temperatures of 600℃ and higher, nitrogen incorporation to the dielectric stacks was observed as Si-N-O-Y bonding units. In addition, by NH_3 PDA at 800℃, the formation of Si-N-Y bonding units becomes significant, implying that interfacial reactions to form silicate bonds were followed by nitridation. The average N content was estimated to be 14.4 at.% for 700℃ NH_3 PDA and 20.0 at.% for 800℃ NH_3 PDA. Capacitance-voltage and Current-voltage characteristics of Al-gate MIS capacitors fabricated after PDA show that NH_3 PDA enables us to reduce the leakage current without a significant decrease in gate capacitance in comparison with the cases of O_2 and N_2 PDA. It is also found that NF_3 PDA is effective to reduce fixed charges in the dielectric stack. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | high-k / Y_2O_3 / X-ray photoelectron spectroscopy / silicate / NH_3 anneal |
| Paper # | SDM2005-77 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/3(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Chemical Bonding Features and Electrical Properties of Nitrogen Incorporated Y_2O_3-based Gate Dielectric Stacks |
| Sub Title (in English) | |
| Keyword(1) | high-k |
| Keyword(2) | Y_2O_3 |
| Keyword(3) | X-ray photoelectron spectroscopy |
| Keyword(4) | silicate |
| Keyword(5) | NH_3 anneal |
| 1st Author's Name | Hiroyuki Abe |
| 1st Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University() |
| 2nd Author's Name | Hiroshi Nakagawa |
| 2nd Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| 3rd Author's Name | Masahiro Taira |
| 3rd Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| 4th Author's Name | Akio Ohta |
| 4th Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| 5th Author's Name | Hideki Murakami |
| 5th Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| 6th Author's Name | Seiichiro Higashi |
| 6th Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| 7th Author's Name | Seiichi Miyazaki |
| 7th Author's Affiliation | Graduate School of Advance Science of Matter, Hiroshima University |
| Date | 2005/6/3 |
| Paper # | SDM2005-77 |
| Volume (vol) | vol.105 |
| Number (no) | 109 |
| Page | pp.pp.- |
| #Pages | 4 |
| Date of Issue | |