| Presentation | 2005/6/2 Fabrication of HfO_2/Si structure and its characterizaton using HR-RBS Tomo UENO, Yoshitaka NAGASATO, Akiko KOBAYASHI, Shin IRINO, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | A novel process for fabricating a high-k dielectric/Si structure is proposed. The structure is fabricated by ultrahigh vacuum (UHV) sputtering of metal film on Si substrate followed by post oxidation annealing. Using this method, an interfacial layer such as SiO_2 is scarcely formed because the Si surface is already covered with metal film by UHV sputtering, before heating in oxidant ambient. Consequently, the thickness of an interfacial layer is as low as 0.2～0.3nm in the HfO_2/Si structure calculated from the results of C-V characteristics. In addition, high-resolution Rutherford backscattering spectroscopy (HR-RBS) shows no interdiffusion of Hf and Si with the post oxidation temperature of up to 300℃ in this process. These experimental facts show that this novel process is effective for fabricating the high-k dielectric/Si stacked structure with ultrasmall equivalent oxide thickness (EOT) for the next-generation metal-oxide-semiconductor field effect transistor (MOSFET). |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | high-K material / EOT / MOS / UHV sputtering / HR-RBS |
| Paper # | SDM2005-69 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Vice Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Fabrication of HfO_2/Si structure and its characterizaton using HR-RBS |
| Sub Title (in English) | |
| Keyword(1) | high-K material |
| Keyword(2) | EOT |
| Keyword(3) | MOS |
| Keyword(4) | UHV sputtering |
| Keyword(5) | HR-RBS |
| 1st Author's Name | Tomo UENO |
| 1st Author's Affiliation | Tokyo University of Agriculture and Technology() |
| 2nd Author's Name | Yoshitaka NAGASATO |
| 2nd Author's Affiliation | Tokyo University of Agriculture and Technology |
| 3rd Author's Name | Akiko KOBAYASHI |
| 3rd Author's Affiliation | Tokyo University of Agriculture and Technology:(Present address)TOSHIBA CORPORATION semiconductor company |
| 4th Author's Name | Shin IRINO |
| 4th Author's Affiliation | Tokyo University of Agriculture and Technology |
| Date | 2005/6/2 |
| Paper # | SDM2005-69 |
| Volume (vol) | vol.105 |
| Number (no) | 108 |
| Page | pp.pp.- |
| #Pages | 6 |
| Date of Issue | |