| Presentation | 2005/6/2 Combinatorial Characterization of Electrical Properties On Hf-based oxides : Materials selection rule and interface control by thermodynamics Toyohiro Chikyow, Ken Hasegawa, Tae Tamori, Parhat Ahmet, Dmitry Kukurznyak, Kiyomi Nakajima, Keisaku Yamada, Hideomi Koinuma, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | Materials exploration were carried out for gate dielectric and metal gate by combinatorial method. In HfO2-Al2O3-Y2O3 system, we found a region where low leakage current and little flat band shift were performed. This fact was explained from the phase where the charge neutrality was satisfied. Also it was proved that this idea can apply to the gate insulator/Si For the metal gate materials, we demonstrated a composition spread between Pt and W and showed work function variation in 0.8eV. However this value was not identical with the work function difference which was measured by C-V method. This was explained with interface traps, which may caused by reaction between metal and gate oxides. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | Combinatorial / gate dielectric / metal Gate / Thermodynamics |
| Paper # | SDM2005-68 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Chair | |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Combinatorial Characterization of Electrical Properties On Hf-based oxides : Materials selection rule and interface control by thermodynamics |
| Sub Title (in English) | |
| Keyword(1) | Combinatorial |
| Keyword(2) | gate dielectric |
| Keyword(3) | metal Gate |
| Keyword(4) | Thermodynamics |
| 1st Author's Name | Toyohiro Chikyow |
| 1st Author's Affiliation | National Institute for Materials Science() |
| 2nd Author's Name | Ken Hasegawa |
| 2nd Author's Affiliation | Tokyo Institute of Technology |
| 3rd Author's Name | Tae Tamori |
| 3rd Author's Affiliation | Tokyo Institute of Technology |
| 4th Author's Name | Parhat Ahmet |
| 4th Author's Affiliation | National Institute for Materials Science |
| 5th Author's Name | Dmitry Kukurznyak |
| 5th Author's Affiliation | National Institute for Materials Science |
| 6th Author's Name | Kiyomi Nakajima |
| 6th Author's Affiliation | National Institute for Materials Science |
| 7th Author's Name | Keisaku Yamada |
| 7th Author's Affiliation | Nanotech center of Waseda University |
| 8th Author's Name | Hideomi Koinuma |
| 8th Author's Affiliation | Nanotech center of Waseda University |
| Date | 2005/6/2 |
| Paper # | SDM2005-68 |
| Volume (vol) | vol.105 |
| Number (no) | 108 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |