Presentation 2005/6/2
Thermal stability of HfO_2 and its alloys as gate dielectric materials : Molecular dynamics simulation
Chioko KANETA, Takahiro YAMASAKI, Yuko KOSAKA,
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Abstract(in English) Hf-based alloys are considered to be the promising candidates for the high-dielectric-constant gate dielectric materials in future CMOS. Under thermal treatments during the fabrication processes, they often change their compositions and become inhomogeneous, due to the crystallization, phase separation, and mixing with the ultrathin interfacial SiO_2 layers formed between the Si substrate. We investigated the thermal properties of the Hf-based alloys of various compositions, by employing the classical molecular dynamics method. The composition dependence of the crystallization and phase separation mechanism, and the growth mechanism of the crystal nucleus of HfO_2 are clarified. The remarkable difference of the diffisibility of Hf atoms into the interfacial SiO_2 layer and that of Si atoms into the Hf-silicate is also shown.
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Keyword(in English) high-k / HfO_2 / gate dielectrics / thermal stability / molecular dynamics
Paper # SDM2005-67
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Committee SDM
Conference Date 2005/6/2(1days)
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Registration To Silicon Device and Materials (SDM)
Language JPN
Title (in Japanese) (See Japanese page)
Sub Title (in Japanese) (See Japanese page)
Title (in English) Thermal stability of HfO_2 and its alloys as gate dielectric materials : Molecular dynamics simulation
Sub Title (in English)
Keyword(1) high-k
Keyword(2) HfO_2
Keyword(3) gate dielectrics
Keyword(4) thermal stability
Keyword(5) molecular dynamics
1st Author's Name Chioko KANETA
1st Author's Affiliation Fujitsu Laboratories Ltd.()
2nd Author's Name Takahiro YAMASAKI
2nd Author's Affiliation Fujitsu Laboratories Ltd.
3rd Author's Name Yuko KOSAKA
3rd Author's Affiliation Fujitsu Laboratories Ltd.
Date 2005/6/2
Paper # SDM2005-67
Volume (vol) vol.105
Number (no) 108
Page pp.pp.-
#Pages 6
Date of Issue