| Presentation | 2005/6/2 Scanning Tunneling Microscopy Study of High-k Gate Dielectric Films : Correlation between STM-induced Spots and Fixed Positive Charges Noriyuki Miyata, Hiroyuki Ota, Masakazu Ichikawa, |
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| PDF Download Page | PDF download Page Link |
| Abstract(in Japanese) | (See Japanese page) |
| Abstract(in English) | We found that nanometer-scale spots in scanning tunneling microscopy (STM) images appear during the STM observation of thin HfO_2 films on Si. It is considered that these STM-induced spots correspond to some specific defects around the HfO_2 surface. The defect density estimated by STM decreases with increasing the temperature of post deposition annealing (PDA, 400-550℃). Furthermore, the PDA-temperature dependence of the defect density is approximately consistent with that of the density of fixed positive charges in the HfO_2 films. We therefore consider that STM visualizes the sites of fixed positive charges in the HfO_2 films. |
| Keyword(in Japanese) | (See Japanese page) |
| Keyword(in English) | High-k / HfO_2 / STM / Fixed Charge |
| Paper # | SDM2005-65 |
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| Conference Information | |
| Committee | SDM |
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| Conference Date | 2005/6/2(1days) |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
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| Paper Information | |
| Registration To | Silicon Device and Materials (SDM) |
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| Language | JPN |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Scanning Tunneling Microscopy Study of High-k Gate Dielectric Films : Correlation between STM-induced Spots and Fixed Positive Charges |
| Sub Title (in English) | |
| Keyword(1) | High-k |
| Keyword(2) | HfO_2 |
| Keyword(3) | STM |
| Keyword(4) | Fixed Charge |
| 1st Author's Name | Noriyuki Miyata |
| 1st Author's Affiliation | Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST)() |
| 2nd Author's Name | Hiroyuki Ota |
| 2nd Author's Affiliation | Advanced Semiconductor Research Center, National Institute of Advanced Industrial Science and Technology (ASRC, AIST) |
| 3rd Author's Name | Masakazu Ichikawa |
| 3rd Author's Affiliation | Department of Applied Physics, Graduate School of Engineering, the University of Tokyo |
| Date | 2005/6/2 |
| Paper # | SDM2005-65 |
| Volume (vol) | vol.105 |
| Number (no) | 108 |
| Page | pp.pp.- |
| #Pages | 5 |
| Date of Issue | |